| PART |
Description |
Maker |
| IPP35CN10NG IPP35CN10NG10 IPD35CN10NG IPB35CN10NG |
OptiMOS2 Power-Transistor
|
Infineon Technologies AG
|
| IPP05N03LBG IPP05N03LBG08 |
OptiMOS2 Power-Transistor
|
Infineon Technologies AG
|
| IPI80CN10NG IPP80CN10NG10 IPB80CN10NG IPD80CN10NG |
OptiMOS2 Power-Transistor
|
Infineon Technologies AG
|
| IPB06N03LB |
OptiMOS2 Power-Transistor 的OptiMOS2功率晶体
|
Infineon Technologies AG
|
| IPD05N03LB |
OptiMOS®2 - SuperSO8, SO8, DPAK
OptiMOS2 Power-Transistor
|
Infineon Technologies A...
Infineon Technologies AG
|
| BSO350N03 |
Low Voltage MOSFETs - OptiMOS? Power MOSFET, 30V, SO8, RDSon = 35mOhm, 6.0A, LL, dual
OptiMOS2 Power-Transistor
|
INFINEON[Infineon Technologies AG]
|
| Q67042S4291 BSC094N03S BSC094N03SG Q67042-S4291 |
OptiMOS2 Power-Transistor OptiMOS2功率晶体
OptiMOS®2 - SuperSO8, SO8, DPAK
|
INFINEON[Infineon Technologies AG]
|
| IPBH6N03LAG |
OptiMOS2 Power-Transistor
OptiMOS㈢2 Power-Transistor
|
Infineon Technologies AG
|
| BSL205N |
OptiMOS2 Small-Signal-Transistor
|
Infineon Technologies AG
|
| IPU07N03LA |
OptiMOS®2 - Power packages
OptiMOS2 Power MOSFET. 25V. TO251. RDSon = 6.5mOhm. 30A. LL ？的OptiMOS功率MOSFET25V的TO251。导通状态\u003d 6.5mOhm30A条。当地雇员？
|
Infineon
Toshiba, Corp.
|
| BSS806N |
OptiMOS2 Small-Signal-Transistor Ultra Logic level (1.8V rated) Avalanche rated
|
TY Semiconductor Co., Ltd
|
| BUW36 BUY69A BUY69B BUX48 BUX80 BDX87 BDX88 BDW51 |
Leaded Power Transistor Darlington
Power Transistors 15 A, 45 V, PNP, Si, POWER TRANSISTOR, TO-3
INDUCTOR PWR UNSHIELD 470UH SMT
Certification- 5.2kVDC Isolation- Power Sharing- Pin Compatible with RH & RK Series, SIP DC-DC Converters- UL94V-0 Package M
Leaded Power Transistor General Purpose
|
Central Semiconductor, Corp.
Central Semiconductor Corp.
CENTRAL[Central Semiconductor Corp]
|
