| PART |
Description |
Maker |
| M58WR128FB M58WR128FB60ZB6F |
128 Mbit (8Mb x 16, Multiple Bank, Burst) 1.8V Supply Flash Memory
|
ST Microelectronics
|
| M58LR128GT |
128 Mbit (8Mb x16- Multiple Bank Multi-Level - Burst) 1.8V Supply Flash Memory
|
STMicroelectronics
|
| M29DW128F M29DW128F60NF1 M29DW128F60NF1E M29DW128F |
128 Mbit (16Mb x8 or 8Mb x16, Multiple Bank, Page, Boot Block) 3V Supply, Flash Memory 128兆位16Mb的x8或和8Mb x16插槽，多行，页，引导块）3V电源，快闪记忆体
128 Mbit (16Mb x8 or 8Mb x16, Multiple Bank, Page, Boot Block) 3V Supply, Flash Memory 128兆位6Mb的x8或和8Mb x16插槽，多行，页，引导块）3V电源，快闪记忆体
|
STMicroelectronics N.V.
STMICROELECTRONICS[STMicroelectronics]
|
| M30L0R7000T0ZAQE M30L0R7000B0ZAQ M30L0R7000XX M30L |
AB 35C 7#12,28#16 PIN RECP
128 Mbit (8Mb x16, Multiple Bank, Multi-Level, Burst), 1.8V Supply Flash Memory
CAP 0.047UF 100V 20% X7R DIP-2 BULK R-MIL-C-39014 128兆位兆x16插槽，多银行，多层次，多突发），1.8V电源快闪记忆
|
意法半导
STMicroelectronics N.V.
|
| M69KB128AA70AW8 M69KB128AA70CW8 M69KB128AA70DW8 M6 |
128 Mbit (8Mb x16) 1.8V Supply, Burst PSRAM
|
STMicroelectronics
|
| M29W128FL60N6E M29W128FL60N6F M29W128FL70ZA6E M29W |
128 Mbit (8Mb x 16 or 16Mb x 8, Page, Uniform Block) 3V Supply Flash Memory
|
Numonyx B.V
|
| M58LW128BZA M58LW128A M58LW128A150N1E M58LW128A150 |
128 Mbit 8Mb x16 or 4Mb x32, Uniform Block, Burst 3V Supply Flash Memories
|
STMICROELECTRONICS[STMicroelectronics]
|
| M36L0T7050B2 M36L0T7050B2ZAQ M36L0T7050B2ZAQE M36L |
128 Mbit (Multiple Bank, Multi-Level, Burst) Flash memory and 32 Mbit (2Mb x16) PSRAM, Multi-Chip Package
|
Numonyx B.V
|
| M58LT128HST8ZA6F M58LT128HSB M58LT128HST M58LT128H |
128-Mbit (8 Mb 】16, Multiple Bank, Multilevel interface, Burst) 1.8 V supply, Secure Flash memories
|
STMICROELECTRONICS[STMicroelectronics]
|
| M30LW128D M30LW128D110N1T M30LW128D110N6T M30LW128 |
128 Mbit (two 64Mbit, x8/x16, Uniform Block, Flash Memories) 3V Supply, Multiple Memory Product
|
ST Microelectronics
意法半导
|
