PART |
Description |
Maker |
GM71C17800C GM71C17800C-5 GM71C17800C-7 GM71C17800 |
x8 Fast Page Mode DRAM 2M X 8 FAST PAGE DRAM, 60 ns, PDSO28 x8 Fast Page Mode DRAM 2M X 8 FAST PAGE DRAM, 50 ns, PDSO28 2,097,152 WORDS x 8 BIT CMOS DYNAMIC RAM 2M X 8 FAST PAGE DRAM, 50 ns, PDSO28 x8 Fast Page Mode DRAM 2M X 8 FAST PAGE DRAM, 70 ns, PDSO28 2Mx8|5V|2K|5/6|FP/EDO DRAM - 16M IC LOGIC 1G125 SINGLE BUS BUFFER GATE WITH 3-STATE OUTPUTS -40 85C SOT-23-5 3000/REEL 2/097/152 WORDS x 8 BIT CMOS DYNAMIC RAM
|
Hynix Semiconductor, Inc. Hynix Semiconductor Inc.
|
KM416C1204CJ-L5 KM416V1004CJ-L5 KM416C1004CJ-L45 K |
5V, 1M x 16 bit CMOS DRAM with extended data out, 50ns 3.3V, 1M x 16 bit CMOS DRAM with extended data out, 50ns 5V, 1M x 16 bit CMOS DRAM with extended data out, 45ns 5V, 1M x 16 bit CMOS DRAM with extended data out, 60ns
|
Samsung Electronic
|
AS4LC2M8S0-8TC AS4LC1M16S0-8TC AS4LC2M8S0-7TC AS4L |
3.3V 2M ??8/1M ??16 CMOS synchronous DRAM 3.3V 2M 8/1M 16 CMOS synchronous DRAM 1M X 16 SYNCHRONOUS DRAM, 6 ns, PDSO50 3.3V 2M × 8/1M × 16 CMOS synchronous DRAM
|
Alliance Semiconductor, Corp. Alliance Semiconductor Corporation
|
AS4C1M16E5-50JC AS4C1M16E5-60JC AS4C1M16E5-60JI AS |
5V 1M x 16 CMOS DRAM (EDO) 5V 1M】16 CMOS DRAM (EDO) 5V 1M16 CMOS DRAM (EDO)
|
ALSC[Alliance Semiconductor Corporation]
|
MB85343C-70 |
CMOS 1M×32 BIT
Hyper Page Mode DRAM Module(CMOS 1M×32位超级页面存取模式动态RAM模块) CMOS 1M×32 BIT Hyper Page Mode DRAM Module(CMOS 1M×32位超级页面存取模式动态RAM模块) 的CMOS 100万32位的超页模式内存的CMOS00万32位超级页面存取模式动态内存模块)
|
Fujitsu Limited Fujitsu, Ltd.
|
MCM54410AN60 MCM54410AN60R2 MCM54410AN-60 MCM54410 |
1M x 4 CMOS DRAM 1M x 4 CMOS Dynamic RAM Write Per Bit Mode
|
Motorola, Inc
|
AS4C14400-70JC AS4C14405-60JC AS4C14405-50TC AS4C1 |
1M-bit 4 CMOS DRAM fast page mode, single 5V power supply, 70ns 1M-bit 4 CMOS DRAM EDO, single 5V power supply, 60ns 1M-bit 4 CMOS DRAM EDO, single 5V power supply, 50ns 1M-bit 4 CMOS DRAM EDO, single 5V power supply, 70ns 1M-bit 4 CMOS DRAM EDO, single 5V power supply, 40ns 1M-bit 4 CMOS DRAM fast page mode, single 5V power supply, 60ns 1M-bit 4 CMOS DRAM fast page mode, single 5V power supply, 50ns 1M-bit 4 CMOS DRAM fast page mode, single 5V power supply, 40ns
|
Alliance Semiconductor
|
TC514280BZLL-70 TC5116440BSJ-70 TC5116105BSJ-60 TC |
256K X 18 FAST PAGE DRAM, 70 ns, PZIP40 ZIP-40 4M X 4 OTHER DRAM, 70 ns, PDSO26 16M X 1 EDO DRAM, 60 ns, PDSO24 4M X 4 OTHER DRAM, 50 ns, PDSO26 16K X 4 CACHE SRAM, 10 ns, PDIP24
|
SIEMENS AG
|
KM41C256 |
CMOS DRAM
|
Samsung Electronics
|
AS4C4M4E0 |
4M x 4 CMOS DRAM
|
Alliance Semiconductor
|
MCM51L4100 |
4M x 1 CMOS DRAM
|
Motorola
|
|