PART |
Description |
Maker |
IRF450 IRF451 IRF452 IRF252 IRF250 IRF251 |
N-CHANNE POWER MOSFETS
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New Jersey Semi-Conductor Products, Inc. New Jersey Semi-Conductor P... New Jersey Semi-Conduct...
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FX6ASH3 FX6ASH2 FX6UMH3 FX6VSH3 FX6SMH3 FX6KMH2 FX |
TRANSISTOR | MOSFET | P-CHANNEL | 150V V(BR)DSS | 6A I(D) | TO-252AA TRANSISTOR | MOSFET | P-CHANNEL | 100V V(BR)DSS | 6A I(D) | TO-252AA TRANSISTOR | MOSFET | P-CHANNEL | 150V V(BR)DSS | 6A I(D) | TO-220AB TRANSISTOR | MOSFET | P-CHANNEL | 150V V(BR)DSS | 6A I(D) | TO-263AB TRANSISTOR | MOSFET | P-CHANNEL | 150V V(BR)DSS | 6A I(D) | TO-247VAR TRANSISTOR | MOSFET | P-CHANNEL | 100V V(BR)DSS | 6A I(D) | SOT-186 TRANSISTOR | MOSFET | P-CHANNEL | 100V V(BR)DSS | 6A I(D) | TO-263AB TRANSISTOR | MOSFET | P-CHANNEL | 100V V(BR)DSS | 6A I(D) | TO-220AB TRANSISTOR | MOSFET | P-CHANNEL | 100V V(BR)DSS | 6A I(D) | TO-247VAR TRANSISTOR | MOSFET | P-CHANNEL | 150V V(BR)DSS | 6A I(D) | SOT-186 TRANSISTOR | MOSFET | P-CHANNEL | 100V V(BR)DSS | 20A I(D) | TO-252AA 晶体管| MOSFET的| P通道| 100V的五(巴西)直| 20A条(丁)|52AA TRANSISTOR | MOSFET | P-CHANNEL | 150V V(BR)DSS | 3A I(D) | TO-220AB 晶体管| MOSFET的| P通道| 150伏五(巴西)直| 3A条(丁)| TO - 220AB现有
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Cooper Bussmann, Inc.
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IRF637 IRFP256 IRFP257 IRFP242R IRF230R IRFP240R I |
TRANSISTOR | MOSFET | N-CHANNEL | 275V V(BR)DSS | 6.5A I(D) | TO-220AB TRANSISTOR | MOSFET | N-CHANNEL | 275V V(BR)DSS | 23A I(D) | TO-247 TRANSISTOR | MOSFET | N-CHANNEL | 275V V(BR)DSS | 21A I(D) | TO-247 TRANSISTOR | MOSFET | N-CHANNEL | 200V V(BR)DSS | 20A I(D) | TO-247 TRANSISTOR | MOSFET | N-CHANNEL | 200V V(BR)DSS | 9A I(D) | TO-204AA TRANSISTOR | MOSFET | N-CHANNEL | 350V V(BR)DSS | 500MA I(D) | TO-250VAR TRANSISTOR | MOSFET | N-CHANNEL | 350V V(BR)DSS | 2.5A I(D) | TO-205AF TRANSISTOR | MOSFET | N-CHANNEL | 350V V(BR)DSS | 3.5A I(D) | TO-205AF TRANSISTOR | MOSFET | N-CHANNEL | 350V V(BR)DSS | 4.5A I(D) | TO-204AA TRANSISTOR | MOSFET | N-CHANNEL | 350V V(BR)DSS | 400MA I(D) | TO-250VAR 晶体管| MOSFET的| N沟道| 200伏五(巴西)直| 18A条(丁)| TO - 220AB现有 TRANSISTOR | MOSFET | N-CHANNEL | 200V V(BR)DSS | 8A I(D) | TO-204AA 晶体管| MOSFET的| N沟道| 200伏五(巴西)直| 8A条(丁)|04AA TRANSISTOR | MOSFET | N-CHANNEL | 200V V(BR)DSS | 8A I(D) | TO-220AB 晶体管| MOSFET的| N沟道| 200伏五(巴西)直| 8A条(丁)| TO - 220AB现有 TRANSISTOR | MOSFET | N-CHANNEL | 200V V(BR)DSS | 5A I(D) | TO-220AB 晶体管| MOSFET的| N沟道| 200伏五(巴西)直| 5A条(丁)| TO - 220AB现有 TRANSISTOR | MOSFET | N-CHANNEL | 200V V(BR)DSS | 33A I(D) | TO-247 晶体管| MOSFET的| N沟道| 200伏五(巴西)直|3A条(丁)|47 TRANSISTOR | MOSFET | N-CHANNEL | 275V V(BR)DSS | 22A I(D) | TO-204AA 晶体管| MOSFET的| N沟道| 275V五(巴西)直| 22A条(丁)|04AA
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ECM Electronics, Ltd. Fairchild Semiconductor, Corp.
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2SK1547 2SK947 2SK903 |
MOSFET Transistor TRANSISTOR,MOSFET,N-CHANNEL,250V V(BR)DSS,12A I(D),TO-220AB TRANSISTOR,MOSFET,N-CHANNEL,800V V(BR)DSS,4A I(D),TO-220
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Fuji Electric Fuji Semiconductors, Inc.
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2SK956 2SK1010 2SK1507-01 2SK958 2SK1547-01 2SK138 |
TRANSISTOR | MOSFET | N-CHANNEL | 800V V(BR)DSS | 4A I(D) | TO-247 晶体管| MOSFET的| N沟道| 800V的五(巴西)直| 4A条(丁)|47 Low-Power, Single-/Dual-Level Battery Monitors with Hysteresis and Integrated µP Reset 晶体管| MOSFET的| N沟道| 500V五(巴西)直| 6A条(丁)|20 TRANSISTOR | MOSFET | N-CHANNEL | 900V V(BR)DSS | 3A I(D) | TO-247 MOSFET transistors TRANSISTOR | MOSFET | N-CHANNEL | 800V V(BR)DSS | 9A I(D) | TO-247 Low-Power, Single-/Dual-Level Battery Monitors with Hysteresis and Integrated µP Reset From old datasheet system TRANSISTOR,MOSFET,N-CHANNEL,600V V(BR)DSS,9A I(D),TO-220 TRANSISTOR|MOSFET|N-CHANNEL|500VV(BR)DSS|6AI(D)|TO-220
TRANSISTOR,MOSFET,N-CHANNEL,800V V(BR)DSS,9A I(D),TO-247
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Toshiba, Corp. Mallory Sonalert Products, Inc. Fuji Semiconductors, Inc.
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NDT014 NDT014J23Z |
N-Channel Enhancement Mode Field Effect Transistor.7A0V.2ΩN沟道增强型场效应管(漏电.7A, 漏源电压60V,导通电.2Ω 2.7 A, 60 V, 0.2 ohm, N-CHANNEL, Si, POWER, MOSFET TRANSISTOR | MOSFET | N-CHANNEL | 60V V(BR)DSS | 2.7A I(D) | SOT-223
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Fairchild Semiconductor, Corp. Fairchild Semiconductor Corporation
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IXFX32N50Q IXFK30N50Q IXFK32N50Q IXFX30N50Q |
TRANSISTOR | MOSFET | N-CHANNEL | 500V V(BR)DSS | 32A I(D) | TO-264AA TRANSISTOR|MOSFET|N-CHANNEL|500VV(BR)DSS|32AI(D)|TO-247VAR
HIPERFET POWER MOSFETS Q-CLASS
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IXYS[IXYS Corporation]
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SST5460 SST5462 SST5461 2N5462 2N5460 2N5461 |
P-CHANNEL JFETS MOSFET, N SO-8MOSFET, N SO-8; Transistor type:MOSFET; Transistor polarity:N; Voltage, Vds max:30V; Case style:SO-8; Current, Id cont:6.2A; Current, Idm pulse:30A; Power, Pd:1.5W; Resistance, Rds on:0.024R; SMD:1; Charge, gate
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VISAY[Vishay Siliconix] Vishay Intertechnology,Inc.
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STD1NA60 3633 STD1NA60-1 |
From old datasheet system N - CHANNEL ENHANCEMENT MODE POWER MOS TRANSISTOR TRANSISTOR | MOSFET | N-CHANNEL | 600V V(BR)DSS | 1.6A I(D) | TO-251 N-CHANNEL POWER MOSFET
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http:// STMicroelectronics ST Microelectronics
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STB3NC60 STB3NC60T4 STB3NC60-1 |
TRANSISTOR | MOSFET | N-CHANNEL | 600V V(BR)DSS | 3A I(D) | TO-262AA TRANSISTOR | MOSFET | N-CHANNEL | 600V V(BR)DSS | 3A I(D) | TO-263AB N - CHANNEL 600V - 3.3Ohm -3A-D 2 PAK/I 2 PAK PowerMESH II MOSFET N - CHANNEL 600V - 3.3ohm- 3A - D2PAK/I2PAK PowerMESHII MOSFET
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SGS Thomson Microelectronics STMicroelectronics 意法半导
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NSFY30509 NSFY30942 |
TRANSISTOR | MOSFET | N-CHANNEL | 500V V(BR)DSS | 7A I(D) | TO-257 TRANSISTOR | MOSFET | N-CHANNEL | 900V V(BR)DSS | 3A I(D) | TO-257 晶体管| MOSFET的| N沟道| 900V五(巴西)直| 3A条(丁)|57
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Harwin PLC
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2N5484 2N5485 2N5486 SST5484 SST5485 SST5486 |
High Frequency/General Purpose N-Channel JFETs MOSFET, P SO-8MOSFET, P SO-8; Transistor type:MOSFET; Transistor polarity:P; Voltage, Vds max:20V; Case style:SO-8; Current, Id cont:4.5A; Current, Idm pulse:-20A; Power, Pd:1.3W; Resistance, Rds on:0.04R; SMD:1; Charge, gate p MOSFET, P SO-8MOSFET, P SO-8; Transistor type:MOSFET; Transistor polarity:P; Voltage, Vds max:20V; Case style:SO-8; Current, Id cont:5.6A; Current, Idm pulse:-30A; Power, Pd:1.25W; Resistance, Rds on:0.025R; SMD:1; Charge, gate p
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Vishay Siliconix Vishay Intertechnology,Inc.
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