| PART |
Description |
Maker |
| MRF5S21100H MRF5S21100HR3 MRF5S21100HSR3 |
MRF5S21100HR3, MRF5S21100HSR3 2170 MHz, 23 W Avg., 2 x W-CDMA, 28 V Lateral N-Channel RF Power MOSFETs
2170 MHz, 23 W Avg., 2 x W–CDMA, 28 V Lateral N–Channel RF Power MOSFET
|
Freescale (Motorola)
|
| BLD6G22L-50 BLD6G22LS-50 |
W-CDMA 2110 MHz to 2170 MHz fully integrated Doherty transistor
|
NXP Semiconductors
|
| MAFR-000355-000001 |
Single Junction Drop-In Circulator 2110 MHz-2170 MHz
|
M/A-COM Technology Solutions, Inc.
|
| VLB2080 |
VCO, 2080 MHz - 2170 MHz
|
TEMEX COMPONENTS
|
| MHV5IC2215NR2 |
2170 MHz, 23 dBm, 28 V Single N鈥揅DMA
|
MOTOROLA
|
| MHL21336 |
MHL21336 2110-2170 MHz, 3 W, 31 dB RF Linear LDMOS Amplifier
|
Motorola
|
| SKY65120 |
2110-2170 MHz High Linearity / 2W Power Amplifier
|
Skyworks Solutions
|
| PTF211802A PTF211802E PTF211802 |
LDMOS RF Power Field Effect Transistor 180 W 2110-2170 MHz
LDMOS RF POWER FIELD EFFECT TRANSISTOR 180 W, 2110-2170 MHZ
LDMOS RF Power Field Effect Transistor 180 W/ 2110-2170 MHz
|
http://
INFINEON[Infineon Technologies AG]
|
| PTFB212503EL PTFB212503FL |
Thermally-Enhanced High Power RF LDMOS FETs 240 W, 2110-2170 MHz
|
Infineon Technologies AG
|
| MAPLST2122-060CF |
RF Power Field Effect Transistor LDMOS, 2110 - 2170 MHz, 60W, 28V
|
Tyco Electronics
|
| PTFA211001E |
Thermally-Enhanced High Power RF LDMOS FET 100 W, 2110-2170 MHz
|
Infineon Technologies AG
|
