| PART |
Description |
Maker |
| MTM8N35 MTM8N40 MTH8N40 MTH8N35 |
(MTH8N35 / MTH8N40) Power Field Effect Transistor
Power Field Effect Transistor N-Channel Enhancement-Mode Silicon Gate TMOS
|
Motorola Semiconductor
MOTOROLA[Motorola, Inc]
|
| IRF540_D ON0285 IRF540/D IRF540-D IRF540 |
27 A, 100 V, 0.07 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-220AB
100V7A TMOS Power Field Effect Transistor （N-Channel Enhancement Mode Silicon Gate100V7A TMOS功率场效应管（N沟道增强型硅门）)
From old datasheet system
TMOS POWER FET 27 AMPERES
TMOS E-FET Power Field Effect Transistor N-Channel Enhancement-Mode Silicon Gate
|
Motorola, Inc.
ON Semiconductor
|
| IRF530_D ON0283 IRF530-D IRF530/D |
100V4A TMOS Power Field Effect Transistor （N-Channel Enhancement Mode Silicon Gate100V4A TMOS功率场效应管（N沟道增强型硅门）)
TMOS POWER FET 14 AMPERES
From old datasheet system
TMOS E-FET Power Field Effect Transistor N-Channel Enhancement-Mode Silicon Gate
|
Motorola, Inc.
ON Semiconductor
|
| FDS8926A |
Dual N-Channel Enhancement Mode Field Effect Transistor 5.5 A, 30 V, 0.03 ohm, 2 CHANNEL, N-CHANNEL, Si, POWER, MOSFET
|
Fairchild Semiconductor, Corp.
FAIRCHILD[Fairchild Semiconductor]
|
| UPA1811 UPA1811GR-9JG D11820EJ1V0DS00 |
4 A, 20 V, 0.12 ohm, P-CHANNEL, Si, POWER, MOSFET POWER, TSSOP-8
P-CHANNEL MOS FIELD EFFECT TRANSISTOR FOR SWITCHING
From old datasheet system
|
NEC, Corp.
NEC[NEC]
|
| FDS9934C FDS9934CNL |
Dual N- and P-Channel enhancement mode power field effect transistors 6.5 A, 20 V, 0.03 ohm, 2 CHANNEL, N AND P-CHANNEL, Si, POWER, MOSFET
20V Complementary PowerTrench MOSFET
|
Fairchild Semiconductor, Corp.
|
| TO-263 |
N-Channel Power Field Effect Transistor
|
Hi-Sincerity Mocroelectronics
|
| H02N60SJ H02N60S H02N60SE H02N60SF H02N60SI |
N-Channel Power Field Effect Transistor
|
HSMC CORP.
HSMC[Hi-Sincerity Mocroelectronics]
Hi-Sincerity Mocroelectronics Corp.
|
| H02N65 |
N-Channel Power Field Effect Transistor
|
Hi-Sincerity Mocroelectronics
|
| TO-220AB TO-220FP TO-263 |
N-Channel Power Field Effect Transistor
|
HSMC CORP.
|
| NDB6020PNL |
P-Channel Logic Level Enhancement Mode Field Effect Transistor 24 A, 20 V, 0.05 ohm, P-CHANNEL, Si, POWER, MOSFET, TO-263AB
|
Fairchild Semiconductor, Corp.
|
