| PART |
Description |
Maker |
| MTB50N06V_D MTB50N06V ON2433 MTB50N06V-D |
TMOS V Power Field Effect Transistor D2PAK for Surface Mount N-Channel Enhancement-Mode Silicon Gate
TMOS POWER FET 42 AMPERES 60 VOLTS
From old datasheet system
|
ON Semiconductor
MOTOROLA[Motorola, Inc]
|
| MTP3N100E MTP3N100E_D ON2598 3N100E MTP3N100E-D |
TMOS E-FET Power Field Effect Transistor N-Channel Enhancement-Mode Silicon Gate
From old datasheet system
TMOS POWER FET 3.0 AMPERES 1000 VOLTS RDS(on) = 4.0 OHM
3 A, 1000 V, 4 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-220AB
|
MOTOROLA[Motorola, Inc]
Motorola, Inc.
ON SEMICONDUCTOR
|
| AN1042 |
High Fidelity Switching Audio Amplifiers Using TMOS Power MOSFETs 高保真开关音频放大器使用TMOS功率MOSFET
|
ON Semiconductor
|
| 2N6796 |
TMOS FET TRANSISTOR N - CHANNEL
|
TT electronics Semelab Limited
SEME-LAB[Seme LAB]
|
| MTP25N05E |
TMOS IV Power Field Effect Transistor
|
New Jersey Semi-Conductor P...
|
| VN2410L VN2410LG |
TMOS FET Transistor N-Channel - Enhancement
|
MOTOROLA[Motorola, Inc]
MOTOROLA INC
|
| MGSF3454XT1 MGSF3454XT1_D ON1908 MGSF3454XT1-D ON1 |
From old datasheet system
N-CHANNEL ENHANCEMENT-MODE TMOS MOSFET
Low Rds(on) Small-Signal MOSFETs TMOS Single N-Channel Field Effect Transistors
|
MOTOROLA[Motorola, Inc]
ON Semiconductor
|
| MTW8N50E |
TMOS E FET POWER FIELD EFFECT TRANSISTOR
|
MOTOROLA INC
Motorola, Inc
|
| VN2222LL VN2222LL_D ON3010 |
From old datasheet system
N-hannel Enhancement
TMOS FET Transistor
|
MOTOROLA[Motorola, Inc]
ON Semi
|
