PART |
Description |
Maker |
PHC21025 |
Complementary intermediate level FET
|
NXP Semiconductors N.V.
|
BUK663R2-40C |
N-channel TrenchMOS intermediate level FET
|
NXP Semiconductors
|
BUK6210-55C |
N-channel TrenchMOS intermediate level FET
|
NXP Semiconductors N.V.
|
BUK624R5-30C |
N-channel TrenchMOS intermediate level FET
|
NXP Semiconductors N.V.
|
BUK653R4-40C |
N-channel TrenchMOS intermediate level FET
|
NXP Semiconductors N.V.
|
BUK653R3-30C |
N-channel TrenchMOS intermediate level FET
|
NXP Semiconductors N.V.
|
BUK654R8-40C |
N-channel TrenchMOS intermediate level FET
|
NXP Semiconductors N.V.
|
BUK654R6-55C |
N-channel TrenchMOS intermediate level FET
|
NXP Semiconductors N.V.
|
BUK652R1-30C |
N-channel TrenchMOS intermediate level FET
|
Philips Semiconductors
|
BUK652R7-30C |
N-channel TrenchMOS intermediate level FET
|
Philips Semiconductors
|
BSP030-04 BSP030 |
N-channel TrenchMOS intermediate level FET N沟道 TrenchMOS 中间级场效应 N-channel enhancement mode field-effect transistor From old datasheet system
|
NXP Semiconductors N.V. Philips
|