| PART |
Description |
Maker |
| MB85396A-60 MB85396A-70 |
CMOS 4M×36Bit Synchronous Dynamic Random Access Memory (SDRAM)(CMOS 4M×36同步动态RAM) 4米36Bit的CMOS同步动态随机存取存储器（SDRAM）的CMOS分36位同步动态RAM）的
|
Fujitsu, Ltd.
|
| K4S161622H |
16Mb H-die SDRAM Specification
IC,SDRAM,2X512KX16,CMOS,TSOP,50PIN,PLASTIC
|
Samsung semiconductor
|
| MB8504S072AD-84 MB8504S072AD-100 |
CMOS 4M×72Bit Synchronous Dynamic Random Access Memory (SDRAM)(CMOS 4M×72同步动态RAM)
CMOS 4M×72Bit Synchronous Dynamic Random Access Memory (SDRAM)(CMOS 4M×72同步动态RAM) 4米72Bit的CMOS同步动态随机存取存储器（SDRAM）的CMOS分72位同步动态RAM）的
|
Fujitsu Limited
Fujitsu, Ltd.
|
| HY5DU561622DTP HY5DU561622DLTP HY5DU561622DLTP-K H |
DDR SDRAM - 256Mb
256M DDR SDRAM (268,435,456-bit CMOS Double Data Rate(DDR) Synchronous DRAM)
|
HYNIX[Hynix Semiconductor]
|
| MB8504S072AC-84 |
CMOS 4M×72Bit Synchronous Dynamic Random Access Memory (SDRAM)(CMOS 4M×72同步动态RAM)
|
Fujitsu Limited
|
| EBD25RB4ALFB EBD25RB4ALFB-1A EBD25RB4ALFB-75 EBD25 |
256MB Registered DDR SDRAM DIMM
SDRAM|DDR|32MX72|CMOS|DIMM|184PIN|PLASTIC
|
Elpida Memory
|
| HY5V66GF HY5V66GF-H HY5V66GF-P |
SDRAM - 64Mb
4 Banks x 1M x 16Bit Synchronous DRAM
4Mx16|3.3V|4K|H|SDR SDRAM - 64M
x16 SDRAM x16内存
|
Hynix Semiconductor
TT electronics Semelab, Ltd.
|
| EM6A9320 EM6A9320BI-28 EM6A9320BI-30 EM6A9320BI-33 |
285MHz 2.8V 4M x 32 DDR SDRAM
300MHz 2.8V 4M x 32 DDR SDRAM
333MHz 2.8V 4M x 32 DDR SDRAM
350MHz 2.8V 4M x 32 DDR SDRAM
4M x 32 DDR SDRAM 4米32 DDR SDRAM内存
|
ETRON[Etron Technology, Inc.]
Etron Technology Inc.
ETRON[Etron Technology Inc.]
|
| KM416S4021B |
CMOS SDRAM
|
Samsung Electronics
|
| HYMD132725B8-H HYMD132725B8-K HYMD132725B8-L HYMD1 |
DDR SDRAM - Unbuffered DIMM 256MB
SDRAM|DDR|32MX72|CMOS|DIMM|184PIN|PLASTIC 内存|复员| 32MX72 |的CMOS |内存| 184PIN |塑料
Unbuffered DDR SDRAM DIMM
|
Hynix Semiconductor
|
