PART |
Description |
Maker |
GM9015 |
Excellent HFE Linearity HFE : hFE(0.1mA)/ hFE(2mA)=0.95(Typ.)
|
Guilin Strong Micro-Electronics Co., Ltd.
|
GM9013 |
Excellent HFE Linearity HFE hFE(2)=25(Min.) at VCE=6V,Ic=400mA
|
Guilin Strong Micro-Electronics Co., Ltd.
|
GM9012 |
Excellent HFE Linearity HFE hFE(2)=25(Min.) at VCE=6V,Ic=400mA.
|
Guilin Strong Micro-Electronics Co., Ltd.
|
2SC4003 |
High breakdown voltage Adoption of MBIT process Excellent hFE linearity
|
TY Semiconductor Co., Ltd
|
2SC3617 |
World standard miniature package. High hFE hFE=800 to 1600.
|
TY Semiconductor Co., Ltd
|
KST9012 |
PNP Transistor Excellent hFE liearity Collector Current :IC=-0.5A
|
TY Semicondutor TY Semiconductor Co., Ltd
|
2SA1832 |
High Voltage and High Curren :VCEO=-50V,IC=-150mA(Max.) High hFE: hFE=70 to 400
|
TY Semiconductor Co., Ltd
|
BCX56 BCX56135 |
80 V, 1 A NPN medium power transistors - fT min: 130 MHz; hFE max: 250 ; hFE min: 40 ; I<sub>C</sub> max: 1000 mA; Polarity: NPN ; Ptot max: 1300 mW; VCEO max: 80 V; Package: SOT89 (MPT3; UPAK); Container: Tape reel smd
|
NXP SEMICONDUCTORS Philips
|
CFB949AQ CFD1275AQ CFB949AP CFD1275AP CFD1275R CFB |
2.000W Power PNP Plastic Leaded Transistor. 80V Vceo, 2.000A Ic, 2000 - 5000 hFE. Complementary CFD1275AQ 2.000W Power NPN Plastic Leaded Transistor. 80V Vceo, 2.000A Ic, 2000 - 5000 hFE. Complementary CFB949AQ 2.000W Power PNP Plastic Leaded Transistor. 80V Vceo, 2.000A Ic, 4000 - 10000 hFE. Complementary CFD1275AP 2.000W Power NPN Plastic Leaded Transistor. 80V Vceo, 2.000A Ic, 4000 - 10000 hFE. Complementary CFB949AP 2.000W Power NPN Plastic Leaded Transistor. 60V Vceo, 2.000A Ic, 1000 - 2500 hFE. Complementary CFB949R 2.000W Power PNP Plastic Leaded Transistor. 60V Vceo, 2.000A Ic, 1000 - 10000 hFE. Complementary CFD1275 2.000W Power PNP Plastic Leaded Transistor. 60V Vceo, 2.000A Ic, 4000 - 10000 hFE. Complementary CFD1275P 2.000W Power PNP Plastic Leaded Transistor. 80V Vceo, 2.000A Ic, 2000 - 5000 hFE. Complementary CFD1275AR 2.000W Power PNP Plastic Leaded Transistor. 80V Vceo, 2.000A Ic, 1000 - 10000 hFE. Complementary CFD1275A 2.000W Power NPN Plastic Leaded Transistor. 60V Vceo, 2.000A Ic, 1000 - 10000 hFE. Complementary CFB949 2.000W Power NPN Plastic Leaded Transistor. 60V Vceo, 2.000A Ic, 2000 - 5000 hFE. Complementary CFB949Q
|
Continental Device India Limited
|
HCF4001BEY HCF4001BM1 HCF4001M013TR HCF4001B |
RF Bipolar Transistor; Collector Emitter Voltage, Vceo:3V; Transistor Polarity:Dual P Channel; Power Dissipation:150W; C-E Breakdown Voltage:200V; DC Current Gain Min (hfe):35; Collector Current:15A; DC Current Gain Max (hfe):160 QUAD 2-INPUT NOR GATE
|
意法半导 STMICROELECTRONICS[STMicroelectronics]
|
BCP69 BCP69-10 BCP69-16 BCP69-25 |
PNP Silicon AF Transistor General Purpose Transistors - SOT223; VCEO=20V; hFE=160..375 General Purpose Transistors - SOT223; VCEO=20V; hFE=85..160 General Purpose Transistors - SOT223; VCEO=20V; hFE=100..250
|
Infineon Technologies A... Infineon Technologies AG
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