| PART |
Description |
Maker |
| RDHA720SF06A1NK |
RDHA720SF06A1NK 60V, 20A
|
IR
International Rectifier
|
| HUF76429D305 HUF76429D3S HUF76429D3 HUF76429D3ST |
20A, 60V, 0.027 Ohm, N-Channel, Logic Level UltraFET PowerMOSFET
20A, 60V, 0.027 Ohm, N-Channel, Logic Level UltraFET㈢ Power MOSFET
20A, 60V, 0.027 Ohm, N-Channel, Logic Level UltraFET? Power MOSFET
|
FAIRCHILD[Fairchild Semiconductor]
|
| HUFA76413D3 HUFA76413D3S HUFA76413D3ST |
20A, 60V, 0.056 Ohm, N-Channel, Logic Level UltraFETPower MOSFETs
20A/ 60V/ 0.056 Ohm/ N-Channel/ Logic Level UltraFET Power MOSFETs
20A, 60V, 0.056 Ohm, N-Channel, Logic Level UltraFET Power MOSFETs 20 A, 60 V, 0.061 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-251AA
|
FAIRCHILD[Fairchild Semiconductor]
Fairchild Semiconductor, Corp.
|
| 151-05 151-08 151-07 151-09 152-05 164-18 164-04 1 |
TRANSISTOR | BJT | NPN | 50V V(BR)CEO | 6A I(C) | TO-82
TRANSISTOR | BJT | NPN | 80V V(BR)CEO | 6A I(C) | TO-82
TRANSISTOR | BJT | NPN | 70V V(BR)CEO | 6A I(C) | TO-82
TRANSISTOR | BJT | NPN | 90V V(BR)CEO | 6A I(C) | TO-82
TRANSISTOR | BJT | NPN | 180V V(BR)CEO | 20A I(C) | STR-5/16
TRANSISTOR | BJT | NPN | 40V V(BR)CEO | 20A I(C) | STR-5/16
TRANSISTOR | BJT | NPN | 100V V(BR)CEO | 20A I(C) | STR-5/16
TRANSISTOR | BJT | NPN | 160V V(BR)CEO | 6A I(C) | TO-82
5-Pin µP Supervisory Circuits with Watchdog and Manual Reset
TRANSISTOR | BJT | NPN | 50V V(BR)CEO | 7.5A I(C) | STR-1/4
TRANSISTOR | BJT | NPN | 60V V(BR)CEO | 6A I(C) | TO-82
TRANSISTOR | BJT | NPN | 100V V(BR)CEO | 6A I(C) | TO-82
TRANSISTOR | BJT | NPN | 220V V(BR)CEO | 6A I(C) | TO-82
TRANSISTOR | BJT | NPN | 90V V(BR)CEO | 7.5A I(C) | STR-1/4
TRANSISTOR | BJT | NPN | 60V V(BR)CEO | 7.5A I(C) | STR-1/4
TRANSISTOR | BJT | NPN | 140V V(BR)CEO | 20A I(C) | STR-5/16
TRANSISTOR | BJT | NPN | 70V V(BR)CEO | 7.5A I(C) | STR-1/4
TRANSISTOR | BJT | NPN | 80V V(BR)CEO | 7.5A I(C) | STR-1/4
TRANSISTOR | BJT | NPN | 80V V(BR)CEO | 20A I(C) | STR-5/16
TRANSISTOR | BJT | NPN | 90V V(BR)CEO | 20A I(C) | STR-5/16
TRANSISTOR | BJT | NPN | 200V V(BR)CEO | 7.5A I(C) | STR-1/4
TRANSISTOR | BJT | NPN | 240V V(BR)CEO | 7.5A I(C) | STR-1/4
TRANSISTOR | BJT | NPN | 160V V(BR)CEO | 7.5A I(C) | STR-1/4
TRANSISTOR | BJT | NPN | 100V V(BR)CEO | 10A I(C) | STR-5/16
TRANSISTOR | BJT | NPN | 240V V(BR)CEO | 6A I(C) | TO-82
TRANSISTOR | BJT | NPN | 120V V(BR)CEO | 7.5A I(C) | STR-1/4
TRANSISTOR | BJT | NPN | 180V V(BR)CEO | 6A I(C) | TO-82
晶体管|晶体管|叩| 100V的五（巴西）总裁|甲一c）| STR-5/16
晶体管|晶体管|叩| 180V五（巴西）总裁|甲一c）| STR-5/16
晶体管|晶体管| npn型| 140伏特五（巴西）总裁|甲一c）| STR-5/16
晶体管|晶体管|叩| 50V五（巴西）总裁| 6A条一c）|2
TRANSISTOR | BJT | NPN | 100V V(BR)CEO | 7.5A I(C) | STR-1/4 晶体管|晶体管|叩| 100V的五（巴西）总裁| 7.5AI（丙）|个STR - 1 / 4
TRANSISTOR | BJT | NPN | 60V V(BR)CEO | 20A I(C) | STR-5/16 晶体管|晶体管|叩| 60V的五（巴西）总裁|甲一c）| STR-5/16
TRANSISTOR | BJT | NPN | 50V V(BR)CEO | 20A I(C) | STR-5/16 晶体管|晶体管|叩| 50V五（巴西）总裁|甲一（c）| STR-5/16
TRANSISTOR | BJT | NPN | 70V V(BR)CEO | 20A I(C) | STR-5/16 晶体管|晶体管|叩| 70V的五（巴西）总裁|甲一（c）| STR-5/16
|
Samsung Semiconductor Co., Ltd.
Molex, Inc.
Intel, Corp.
|
| UTT20N06G-TA3-T UTT20N06G-TN3-R UTT20N06L-TQ2-R UT |
20A, 60V N-CHANNEL POWER MOSFET
|
Unisonic Technologies
|
| S20C40 S20C60 S20C30 S20C50 |
SCHOTTKY BARRIER RECTIFIERS(20A/30-60V)
SCHOTTKY BARRIER RECTIFIERS(20A,30-60V)
|
MOSPEC[Mospec Semiconductor]
|
| YG805C06 YG805C06R |
SCHOTTKY BARRIER DIODE (60V / 20A TO-22OF15)
|
FUJI ELECTRIC CO LTD
|
| SGC2060SA-15 |
Surface Mount Schottky Rectifier Reverse Voltage 60V Forward Current 20A
|
GOOD-ARK Electronics
|
| HUF76419D3 HUF76419D3S HUF76419D3ST |
20A, 60V, 0.043 Ohm, N-Channel, Logic Level UltraFET Power MOSFET
20A, 60V, 0.043 Ohm, N-Channel, Logic Level UltraFET? Power MOSFET
|
Fairchild Semiconductor
|
| HAF2012L |
TRANSISTOR | MOSFET | N-CHANNEL | 60V V(BR)DSS | 20A I(D) | TO-262VAR 晶体管| MOSFET的| N沟道| 60V的五（巴西）直| 20A条（丁）|62VAR
|
Renesas Electronics, Corp.
|
| IRFY044CM |
60V 0.040Ω N-Channel HEXFET Power MOSFET(60V 0.040Ω N沟道 HEXFET 功率 MOS场效应管) 60V.040ΩN沟道HEXFET功率MOSFET60V.040Ω沟道的HEXFET功率马鞍山场效应管）
|
International Rectifier, Corp.
|
