PART |
Description |
Maker |
BFS17P Q62702-F940 BFS17PQ62702-F940 |
NPN Silicon RF Transistor (For broadband amplifiers up to 1GHz at collector currents from 1mA to 20mA) UHF BAND, Si, NPN, RF SMALL SIGNAL TRANSISTOR, TO-236 CAP 15000PF X7R 250VAC X2 2220 TRANSISTOR UHF BIPOLAR BREITBAND From old datasheet system
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SIEMENS AG SIEMENS[Siemens Semiconductor Group]
|
BFT93/T1 |
TRANSISTOR UHF BIPOLAR BREITBAND 晶体管超高频双极BREITBAND
|
Bourns, Inc.
|
2SA1708S-AN EN3094B 2SC4488T-AN 2SC4488S-AN |
Bipolar Transistor Bipolar Transistor Adoption of FBET, MBIT processes Bipolar Transistor ?0V, ?A, Low VCE(sat) PNP Single PCP
|
ON Semiconductor
|
2SC2952 |
The 2SC2592 is a High Frequency Transistor Designed for General Purpose VHF-UHF Amplifier Applications. UHF BAND, Si, NPN, RF SMALL SIGNAL TRANSISTOR, TO-39
|
Advanced Semiconductor, Inc. ASI
|
BLW32 |
UHF linear power transistor(UHF线性功率晶体管) UHF BAND, Si, NPN, RF POWER TRANSISTOR
|
NXP Semiconductors N.V. PHILIPS[Philips Semiconductors]
|
BLV194 |
UHF power transistor UHF BAND, Si, NPN, RF POWER TRANSISTOR
|
NXP Semiconductors N.V. Philips Semiconductors
|
BLF2022-70 |
UHF BAND, Si, N-CHANNEL, RF POWER, MOSFET UHF power LDMOS transistor
|
Philips Semiconductors NXP Semiconductors
|
MS1582 |
UHF 860-960 MHz, Class A/AB, Common Emitter; fO (MHz): 0; P(out) (W): 25; Gain (dB): 9; Vcc (V): 25; ICQ (A): 3.2; IMD Type (dB): -45; Case Style: M173 UHF BAND, Si, NPN, RF POWER TRANSISTOR
|
Microsemi, Corp.
|
Q62702-F1582 BF569W Q62702-F1322 |
From old datasheet system PNP Silicon RF Transistor (For oscillators mixer and self-oscillating mixer stages in UHF TV-tuner) PNP Silicon RF Transistor kein Status PNP Silicon RF Transistor (For oscillators, mixer and self-oscillating mixer stages in UHF TV-tuner) NPN Silicon RF Transistor (For low-distortion broadband output amplifier stages in antenna and telecommunications) NPN硅射频晶体管(低失真输出天线的宽带和电信放大级)
|
Siemens Semiconductor G... SIEMENS[Siemens Semiconductor Group] Infineon SIEMENS AG
|
UTV120 |
UHF TV 470-860 MHz, Class A, Common Emitter; fO (MHz): 860; P(out) (W): 12; Gain (dB): 8.9; Vcc (V): 26.5; ICQ (A): 1.7; IMD Type (dB): -52; Case Style: 55JT-2 2 CHANNEL, UHF BAND, Si, NPN, RF POWER TRANSISTOR
|
Microsemi, Corp.
|