| PART |
Description |
Maker |
| GBU8M GBU8J-BP GBU8K-BP GBU8M-BP GBU8J GBU8D-BP GB |
8 Amp Single Phase Glass Passivated Bridge Rectifier 50 to 1000 Volts
RECT BRIDGE GPP 8A 400V GBU 8 A, 400 V, SILICON, BRIDGE RECTIFIER DIODE
RECT BRIDGE GPP 8A 600V GBU 8 A, 600 V, SILICON, BRIDGE RECTIFIER DIODE
RECT BRIDGE GPP 8A 800V GBU 8 A, 800 V, SILICON, BRIDGE RECTIFIER DIODE
RECT BRIDGE GPP 8A 50V GBU 8 A, 50 V, SILICON, BRIDGE RECTIFIER DIODE
RECT BRIDGE GPP 8A 100V GBU 8 A, 100 V, SILICON, BRIDGE RECTIFIER DIODE
|
Micro Commercial Compon...
天津环球磁卡股份有限公司
Micro Commercial Components, Corp.
|
| SVC354 |
Diffused Junction Type Silicon Diode
|
Sanyo
|
| SVC363 |
Diffused Junction Type Silicon Diode
|
Sanyo
|
| SVC364 |
Diffused Junction Type Silicon Diode
|
Sanyo
|
| SVC202SPA |
Diffused Junction Type Silicon Diode
|
Sanyo
|
| U05GU4B48 |
SILICON DIFFUSED JUNCTION TYPE RECTIFIER STACK
|
GOOD-ARK[GOOD-ARK Electronics]
|
| 2SC3212 2SC3212A |
Silicon NPN Triple-Diffused Junction Mesa Type
|
PANASONIC[Panasonic Semiconductor]
|
| 5Z27 E001804 5Z30 |
From old datasheet system
SILICON DIFFUSED JUNCTION (POWER SURGE SUPPRESSOR)
|
Toshiba Corporation
TOSHIBA[Toshiba Semiconductor]
|
| DBG150G |
Diffused Junction Silicon Diode 15A Single-Phase Bridge Rectifier
|
Sanyo Semicon Device
|
| U5ZA27Z U5ZA27C |
ZENER DIODE SILICON DIFFUSED-JUNCTION TYPE BEST SUITED FOR OVERVOLTAGE PROTECTION OF ELECTRONICSYSTEM
|
TOSHIBA
|
