| PART |
Description |
Maker |
| LH5118-10 LH5118HN-10 LH5118D-10 LH5118H-10 LH5118 |
x8 SRAM
x8SRAM
|
|
| AS7C1024L-55PC AS7C1024L-55TC AS7C1024L-55JC AS7C1 |
x8 SRAM x8SRAM
x8 SRAM x8的SRAM
|
Microchip Technology, Inc.
|
| E0C63B07 |
CMOS 4-Bit Low Voltage Singl Single Chip Microcomputer Composed of 4-Bit E0C63000 Core CPU，RAM,ROM7 Segment Type LCD Driver0000 Gates of Gate Array(4位CMOS、低电压、单片微型计算机（含4位E0C63000中央处理器核RAM，ROM7段LCD驱动器，10000门阵列）)
|
爱普生（中国）有限公
|
| HY6264 HY6264-10 HY6264-12 HY6264-15 HY6264-70 HY6 |
8KX8-Bit CMOS SRAM
x8 SRAM 8K X 8 STANDARD SRAM, 70 ns, PDSO28
x8 SRAM 8K X 8 STANDARD SRAM, 70 ns, PDIP28
x8 SRAM 8K X 8 STANDARD SRAM, 85 ns, PDSO28
|
HYNIX[Hynix Semiconductor]
Hynix Semiconductor Inc.
Hynix Semiconductor, Inc.
|
| BS616LV4025 BS616LV4025BC BS616LV4025BI BS616LV402 |
Very Low Power/Voltage CMOS SRAM 256K x 16 or 512K x 8 bit switchable 非常低功电压CMOS SRAM56K × 1612K × 8位开
LM5009 150 mA, 100V Step-Down Switching Regulator; Package: MINI SOIC; No of Pins: 8
|
BRILLIANCE SEMICONDUCTOR, INC.
BSI[Brilliance Semiconductor]
|
| CDSQR400BS-HF |
Halogen Free Switching Diodes, V-RRM=100V, V-R=100V, P-D=125mW, I-F=100mA
|
Comchip Technology
|
| CDBZ5T30100-HF |
Halogen Free Schottky Barrier Diodes, V-RRM=100V, V-R=100V, I-O=30A
|
Comchip Technology
|
| PVD1354NS PVD1352NS |
100V 1 Form A Photo Voltaic Relay in a mod. 8-pin SMT Package 100V A型相片光伏继电器在国防部8引脚SMT封装
|
International Rectifier, Corp.
|
| FDS3672 FDS3672NL |
N-Channel PowerTrench MOSFET 100V/ 7.5A/ 22m
N-Channel PowerTrench MOSFET 100V, 7.5A, 22mз
Discrete Commercial N-Channel UltraFET Trench MOSFET, 100V, 7.5A, 0.022 Ohm @ Vgs = 10V, SO-8 Package
|
FAIRCHILD[Fairchild Semiconductor]
|
| BR501L-G |
Bridge Rectifiers, V-RRM=100V, V-DC=100V, I-(AV)=50A
|
Comchip Technology
|
| HM66AEB18205 HM66AEB18205BP-33 HM66AEB18205BP-30 H |
Memory>Fast SRAM>QDR SRAM
36-Mbit DDR II SRAM Separate I/O 2-word Burst
|
Renesas Technology / Hitachi Semiconductor
|
