| PART |
Description |
Maker |
| MJE15030 MJE15031 MJE15029 MJE15028 ON2012 |
8 AMPERE POWER TRANSISTORS COMPLEMENTARY SILICON 120-150 VOLTS 50 WATTS 8 A, 150 V, PNP, Si, POWER TRANSISTOR, TO-220AB
From old datasheet system
SEMICONDUCTOR TECHNICAL DATA
|
MOTOROLA INC
Motorola Mobility Holdings, Inc.
Motorola, Inc.
MOTOROLA[Motorola, Inc]
ONSEMI[ON Semiconductor]
|
| MJH11019G MJH11018G |
15 AMPERE DARLINGTON COMPLEMENTARY SILICON POWER TRANSISTORS 150−250 VOLTS, 150 WATTS 15 A, 200 V, PNP, Si, POWER TRANSISTOR, TO-218
15 AMPERE DARLINGTON COMPLEMENTARY SILICON POWER TRANSISTORS 150−250 VOLTS, 150 WATTS 15 A, 150 V, NPN, Si, POWER TRANSISTOR, TO-218
|
ON Semiconductor
|
| IRF230-233 IRF231 IRF232 IRF233 MTP12N18 MTP12N20 |
N-Channel Power MOSFETs, 12A, 150-200 V 9 A, 200 V, 0.4 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-220AB
N-Channel Power MOSFETs, 12A, 150-200 V N沟道功率MOSFET，第12A50-200 V
(MTP12N18 / MTP12N20) N-Channel Power MOSFETs
N-Channel Power MOSFETs/ 12A/ 150-200 V
N-Channel Power MOSFETs 12A 150-200 V
|
http://
Fairchild Semiconductor, Corp.
FAIRCHILD[Fairchild Semiconductor]
|
| CM150TU-12H |
240 x 128 pixel format, CFL Backlight with power harness 150 A, 600 V, N-CHANNEL IGBT
Six IGBTMOD 150 Amperes/600 Volts
|
Powerex, Inc.
POWEREX[Powerex Power Semiconductors]
|
| RFP-250375-4X50-2 |
Chip Terminations 150 Watts, 50ohm
|
Anaren Microwave
|
| FMC5 FMG9 FMJ1 FMQ1 |
P-Channel NexFET™ Power MOSFET 6-DSBGA -55 to 150
N-Channel NexFET™ Power MOSFET 8-SON -55 to 150
TRANSISTOR | 20V V(BR)CEO | 30MA I(C) | SOT-25
Digital Media Processor 529-FCBGA 0 to 90 晶体管| 50V五（巴西）总裁| 100mA的一（c）|采用SOT - 25
|
飞思卡尔半导体(中国)有限公司
|
| EP9315-EBZ EP9315-CBZ EP9315-IBZ |
Metal Strip Resistor; Series:WSL; Resistance:0.003ohm; Resistance Tolerance: /- 1 %; Power Rating:0.25W; Temperature Coefficient: /-150 ppm; Package/Case:1206; Terminal Type:PCB Surface Mount; Leaded Process Compatible:Yes
Enhanced Universal Platform System-on-Chip Processor 增强型通用平台上系统芯片处理器
|
Cirrus Logic, Inc.
|
| IRF9643-001PBF IRF9643-003PBF IRF9643-005PBF IRF96 |
9 A, 150 V, 0.7 ohm, P-CHANNEL, Si, POWER, MOSFET
8.7 A, 350 V, 0.8 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-247AC
1.75 A, 150 V, 3 ohm, P-CHANNEL, Si, POWER, MOSFET
1.75 A, 200 V, 3 ohm, P-CHANNEL, Si, POWER, MOSFET
27 A, 100 V, 0.099 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-247AC
3 A, 100 V, 1.2 ohm, P-CHANNEL, Si, POWER, MOSFET
3 A, 150 V, 2.4 ohm, P-CHANNEL, Si, POWER, MOSFET
2.5 A, 100 V, 1.6 ohm, P-CHANNEL, Si, POWER, MOSFET
3.5 A, 150 V, 1.5 ohm, P-CHANNEL, Si, POWER, MOSFET, TO-220AB
11 A, 350 V, 0.55 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-247AC
|
VISHAY INTERTECHNOLOGY INC
|
| STF23NM60ND STI23NM60ND STW23NM60ND STP23NM60ND ST |
N-channel 600 V - 0.150 ヘ - 20 A - D2/I2PAK - TO-220/FP - TO-247 FDmesh⑩ II Power MOSFET
N-channel 600 V - 0.150 Ω - 20 A - D2/I2PAK - TO-220/FP - TO-247 FDmesh?/a> II Power MOSFET
N-channel 600 V - 0.150 Ω - 20 A - D2/I2PAK - TO-220/FP - TO-247 FDmesh II Power MOSFET
N-channel 600 V - 0.150 楼? - 20 A - D2/I2PAK - TO-220/FP - TO-247 FDmesh垄芒 II Power MOSFET
|
http://
STMicroelectronics
|
| STPS40150CG-TR STPS40150CW STPS40150CT |
20 A, 150 V, SILICON, RECTIFIER DIODE, TO-220AB
HIGH VOLTAGE POWER SCHOTTKY RECTIFIER
20 A, 150 V, SILICON, RECTIFIER DIODE, TO-247AC
|
ST Microelectronics
STMICROELECTRONICS
|
| M67741H 67741H M67741 |
RF POWER MODULE 150-175MHz, 12.5V, 30W, FM MOBILE RADIO
135-160MHz /12.5V /30W / FM MOBILE RADIO
150-175MHz,12.5V,30W, FM MOBILE RADIO
From old datasheet system
150-175MHz /12.5V /30W / FM MOBILE RADIO
|
MITSUBISHI[Mitsubishi Electric Semiconductor]
Mitsubishi Electric Corporation
|
|
