| PART |
Description |
Maker |
| BCX52-10 BCX52-16 BCP52-16 BCP52-10 BC52PA |
60 V, 1 A PNP medium power transistors
PNP medium power transistor series in Surface-Mounted Device (SMD) plastic packages.
|
NXP Semiconductors
|
| INA-34063 |
3.0 GHz Medium Power Silicon RFIC Amplifier(3.0 GHz中等功率硅射频集成电路放大器)
3V Fixed Gain. Medium Power Amplifier
3.0 GHz的中功率硅射频放大器.0千兆赫中等功率硅射频集成电路放大器）
|
Agilent(Hewlett-Packard)
|
| 2SA1900 A5800745 |
Transistors > Medium Power Bipolar Transistors(0.5W-1.0W)
From old datasheet system
Medium Power Transistor (-50V, -1A)
|
ROHM
|
| SBM82314X SBM82314 SBM82314Z SBM81314G SBM81314N S |
Medium Power BIDI Optical Standard Module 1550 nm Emitting, 1310 nm Receiving
From old datasheet system
Transceiver
Medium Power BIDI Optical Standard Module 1550 nm Emitting/ 1310 nm Receiving
Components and FTTx solutions - Tx 1550nm/Rx 1310nm, Medium Power
|
INFINEON[Infineon Technologies AG]
|
| SBM52214X SBM52414Z SBM52214G SBM51214G SBM51214N |
Components and FTTx solutions - Tx 1310nm/Rx 1310nm, Medium Power
Medium Power BIDI Optical Standard Module 1310 nm Emitting, 1310 nm Receiving
Medium Power BIDI Optical Standard Module 1310 nm Emitting/ 1550 nm Receiving
Transceiver
Medium Power BIDI Optical Standard Module 1310 nm Emitting/ 1310 nm Receiving
中功率比迪光学标准模1310纳米发光，纳米接1310
|
INFINEON[Infineon Technologies AG]
|
| 2SB1713 2SB1714 2SB852K1 2SC2412K1 2SC41021 2SC472 |
-3A / -12V Bipolar transistor
-2A / -30V Bipolar transistor
High-gain Amplifier Transistor (?32V, ?0.3A)
General purpose transistor (50V, 0.15A)
High-voltage Amplifier Transistor (120V, 50mA)
High-Frequency Amplifier Transistor (11V, 50mA, 3.2GHz)
Power transistor (60V, 3A)
Medium power transistor (60V, 2A)
Medium power transistor (60V, 0.5A)
High-gain Amplifier Transistor (32V , 0.3A)
Medium Power Transistor (32V, 1A)
Power Transistor (80V, 1A)
Low VCE(sat) transistor (strobe flash)
High-current Gain Medium Power Transistor (20V, 0.5A)
Low frequency amplifier
4V Drive Nch MOS FET
10V Drive Nch MOS FET
2.5V Drive Nch MOS FET
4 Amps, 600 Volts N-CHANNEL POWER MOSFET
|
UTC
ROHM[Rohm]
|
| 2SD882S-X-AA3-R 2SD882S-X-AB3-R 2SD882S-X-T92-B 2S |
MEDIUM POWER LOW VOLTAGE TRANSISTOR
MEDIUM POWER LOW VOLTAGE TRANSISTOR 3000 mA, 30 V, NPN, Si, SMALL SIGNAL TRANSISTOR, TO-92
MEDIUM POWER LOW VOLTAGE TRANSISTOR 中功率低电压晶体
|
??『绉???′唤??????
UNISONIC TECHNOLOGIES CO LTD
Unisonic Technologies Co., Ltd.
友顺科技股份有限公司
UTC[Unisonic Technologies]
|
| QM30E3Y-2H QM30E2Y-2H QM30E2Y |
MITSUBISHI TRANSISTOR MODULES MEDIUM POWER SWITCHING USE INSULATED TYPE
MEDIUM POWER SWITCHING USE INSULATED TYPE 中功率开关使用绝缘型
|
MITSUBISHI[Mitsubishi Electric Semiconductor]
Mitsubishi Electric Corporation
Mitsubishi Electric, Corp.
|
| 2SC5720 |
Transistor Silicon NPN Epitaxial Planar Type MEDIUM POWER AMPLIFIER APPLICATIONS STOROBO FLASH APPLICATIONS
MEDIUM POWER AMPLIFIER APPLICATIONS STOROBO FLASH APPLICATIONS 介质功率放大器应STOROBO Flash应用
|
Toshiba Corporation
Toshiba, Corp.
|
| BCP69-16 BCP69-25 BCP69 BCP69/T1 |
TRANSISTOR MEDIUM POWER
PNP medium power transistor
|
PHILIPS[Philips Semiconductors]
|
| BCP69 BCP69-16 BCP69-16_DG BCP69-16_IN BCP69-25 BC |
PNP medium power transistor; 20 V, 1 A - Complement: BCP68 ; fT min: 40 MHz; hFE max: 375 ; hFE min: 85 ; I<sub>C</sub> max: 1000 mA; Polarity: PNP ; Ptot max: 1350 mW; VCEO max: 20 V; Package: SOT223 (SC-73); Container: Tape reel smd
20 V, 1 A PNP medium power transistor
|
NXP Semiconductors
|
