PART |
Description |
Maker |
VIO50-12P1 VII50-12P1 VDI50-12P1 VID50-12P1 |
IGBT Modules: Boost Configurated IGBT Modules From old datasheet system
|
IXYS[IXYS Corporation]
|
CM20AD05-12H CM20AD00-12H |
CIB Modules: 600V MITSUBISHI IGBT MODULES
|
MITSUBISHI[Mitsubishi Electric Semiconductor] Mitsubishi Electric Corporation
|
TM25RZ-24 TM25RZ-2H TM25EZ-24 TM25EZ-2H TM25RZ/EZ- |
THYRISTOR MODULES HIGH POWER GENERAL USE INSULATED TYPE Integrated Gate Bipolar Transistor (IGBT) Modules: 250V
|
Mitsubishi Electric Corporation
|
CM150DU-12F |
IGBT MODULES HIGH POWER SWITCHING USE 150 A, 600 V, N-CHANNEL IGBT
|
Mitsubishi Electric Semiconductor
|
SKM145GB124DN SKM145GAL124DN |
Low Loss IGBT Modules 190 A, 1200 V, N-CHANNEL IGBT
|
SEMIKRON[Semikron International]
|
SEMIX151GAR12T4S |
Trench IGBT Modules 230 A, 1200 V, N-CHANNEL IGBT
|
SEMIKRON
|
SEMIX202GB066HDS08 |
Trench IGBT Modules 270 A, 600 V, N-CHANNEL IGBT
|
Semikron International
|
SEMIX151GB12T4S |
Trench IGBT Modules 230 A, 1200 V, N-CHANNEL IGBT
|
SEMIKRON
|
SEMIX503GB126HDS |
Trench IGBT Modules 480 A, 1200 V, N-CHANNEL IGBT
|
SEMIKRON[Semikron International]
|
SEMIX553GAR128DS09 SEMIX553GAR128DS-09 |
SPT IGBT Modules 540 A, 1200 V, N-CHANNEL IGBT
|
Semikron International
|
RM30TA-H RM30TPM-M RM30TA-M |
MITSUBISHI DIODE MODULES MEDIUM POWER GENERAL USE INSULATED TYPE Integrated Gate Bipolar Transistor (IGBT) Modules: 250V
|
Mitsubishi Electric Corporation
|