| PART |
Description |
Maker |
| 6A8-G 6A05-G 6A10-G 6A1-G 6A2-G 6A4-G 6A6-G |
General Purpose Rectif
|
Comchip Technology Co., Ltd.
COMCHIP[Comchip Technology]
|
| SEF112B |
1.0 A High Voltage Ultrafast Rectif
|
SeCoS Halbleitertechnologie GmbH
|
| ZB5CS-920-10W |
Power wer Splitter/Combiner 5 Way-0° 450 to 920 MHz
Power wer Splitter/Combiner 5 Way-0∑ 450 to 920 MHz
Power wer Splitter/Combiner 5 Way-0 450 to 920 MHz
Power wer Splitter/Combiner 5 Way-0450 to 920 MHz
|
MINI[Mini-Circuits]
|
| TC433E2B |
SAW Resonator 433.920 MHz TO-39
|
TAI-SAW TECHNOLOGY CO., LTD.
|
| R6200230 R6202250 R6201050 R6201850 R6201040 R6200 |
500 A, 400 V, SILICON, RECTIFIER DIODE
General Purpose Rectifier (300-500 Amperes Average 2400 Volts) 通用整流器（300-500安培平均2400伏特
300 A, 2200 V, SILICON, RECTIFIER DIODE HERMETIC SEALED PACKAGE-2
300 A, 1200 V, SILICON, RECTIFIER DIODE
300 A, 200 V, SILICON, RECTIFIER DIODE
|
Powerex Power Semicondu...
POWEREX INC
Powerex, Inc.
POWEREX[Powerex Power Semiconductors]
Powerex Power Semiconductor...
|
| STEVAL-IKR001V6 |
Sub-GHz transceiver development kit based on the SPIRIT1 (920 MHz band)
|
STMicroelectronics
|
| NTSA4100 |
Schottky Rectif
|
ON Semiconductor
|
| PTFA091201F PTFA091201E |
Thermally-Enhanced High Power RF LDMOS FETs 120 W, 920 ?960 MHz
|
Infineon Technologies AG
|
| PTFA091203EL |
Thermally-Enhanced High Power RF LDMOS FETs 120 W, 920-960 MHz
|
Infineon Technologies AG
|
| PTFB091802FCV1R0 |
Thermally-Enhanced High Power RF LDMOS FET 180 W, 28 V, 920 ?960 MHz
|
Infineon Technologies A...
|
| ZN2PD-920-S |
800 MHz - 920 MHz RF/MICROWAVE COMBINER, 0.4 dB INSERTION LOSS ROHS COMPLIANT, CASE VVV180
|
Mini-Circuits
|
