PART |
Description |
Maker |
TIM7179-60SL |
IM3=-45 dBc at Pout= 36.5dBm Single Carrier Level
|
Toshiba Semiconductor
|
TIM5964-80SL08 |
IM3=-30 dBc at Pout= 42.0dBm Single Carrier Level
|
Toshiba Semiconductor
|
ICE2B0565 ICE2A0565 ICE2A0565Z ICE2A180Z ICE2A265 |
Integrated Power ICs - max Pout=13W, fop=67kHz, Vbreak=650V, DIP8 Integrated Power ICs - max. Pout=12W, Vbreak=650V, fop=100kHz, DIP7 Integrated Power ICs - max. Pout=17W, fop=100kHz, Vbreak=800V, DIP7 Integrated Power ICs - max. Pout=32W, fop=100kHz, Vbreak=650V, DIP8 Integrated Power ICs - max. Pout=31W, fop=100kHz, Vbreak=800V, DIP7 Integrated Power ICs - max. Pout=130W, fop=100kHz, Vbreak=650V, TO220 Integrated Power ICs - max. Pout=18W, fop=67kHz, Vbreak=650V, DIP8 Integrated Power ICs - max. Pout=32W, fop=67kHz, Vbreak=650V, DIP8 Integrated Power ICs - max. Pout=45W, fop=67kHz, Vbreak=650V, DIP8 Integrated Power ICs - max. Pout=130W, fop=67kHz, Vbreak=650V, TO220
|
Infineon
|
ICE2A165 ICE2A365 |
Integrated Power ICs - max. Pout=18W, fop=100kHz, Vbreak=650V, DIP8 Integrated Power ICs - max. Pout=45W, fop=100kHz, Vbreak=650V, DIP8
|
Infineon
|
SDIP-38L |
IGBT intelligent power module (IPM) 14 A, 600 V, DBC isolated SDIP-38L molded
|
STMicroelectronics
|
STGIPS10K60A |
IGBT intelligent power module (IPM) 10 A, 600 V, DBC isolated SDIP-25L molded
|
STMicroelectronics
|
TIM4450-8UL |
HIGH POWER P1dB=39.5dBm at 4.4GHz to 5.0GHz
|
Toshiba Semiconductor
|
TIM6472-4UL09 |
HIGH POWER P1dB=36.5dBm at 6.4GHz to 7.2GHz
|
Toshiba Semiconductor
|
TIM4450-4UL06 |
HIGH POWER P1dB=36.5dBm at 4.4GHz to 5.0GHz
|
Toshiba Semiconductor
|
TIM4450-12UL |
HIGH POWER P1dB=41.5dBm at 4.4GHz to 5.0GHz
|
Toshiba Semiconductor
|
TIM4450-25UL |
HIGH POWER P1dB=44.5dBm at 4.4GHz to 5.0GHz
|
Toshiba Semiconductor
|
TIM7179-25UL |
HIGH POWER P1dB=44.5dBm at 7.1GHz to 7.9GHz
|
Toshiba Semiconductor
|
|