| PART |
Description |
Maker |
| VSC851FX |
1.6 Gb/s 32x32 crosspoint switch
|
Vitesse Semiconductor Corporation
|
| C67076-A1053-A2 BSM191F |
SIMOPAC Module (Power module Single switch FREDFET N channel Enhancement mode) 28 A, 1000 V, 0.42 ohm, N-CHANNEL, Si, POWER, MOSFET
SIMOPAC ? Module
|
SIEMENS A G
SIEMENS AG
Infineon
SIEMENS[Siemens Semiconductor Group]
|
| C67076-A1050-A2 BSM151F |
SIMOPAC Module (Power module Single switch FREDFET N channel Enhancement mode)
From old datasheet system
|
SIEMENS AG
SIEMENS[Siemens Semiconductor Group]
|
| MG600Q1US61 |
TOSHIBA IGBT Module Silicon N Channel IGBT
GTR Module Silicon N Channel IGBT High Power Switching Applications Motor Control Applications
|
Toshiba Semiconductor
|
| MG150J7KS60 |
GTR Module Silicon N Channel IGBT High Power Switching Applications Motor Control Applications
TOSHIBA GTR MODULE SILICON N CHANNEL IGBT
|
Toshiba Semiconductor
|
| FD6M043N08 |
75V/65A Synchronous Rectifier Module; Package: EPM15-AA; No of Pins: 15; Container: Rail 65 A, 75 V, 0.0043 ohm, 2 CHANNEL, N-CHANNEL, Si, POWER, MOSFET
|
Fairchild Semiconductor, Corp.
|
| MHW8247A |
870 MHz 24.9 dB Gain 112–Channel GaAs CATV Amplifier Module
Gallium Arsenide CATV Amplifier Module
|
Freescale (Motorola)
MOTOROLA[Motorola, Inc]
|
| MHW8227A |
MHW8227A 870 MHz, 22.1 dB Gain, 112-Channel GaAs CATV Amplifier Module
Gallium Arsenide CATV Amplifier Module
|
MOTOROLA[Motorola, Inc]
|
| MIG300J101H |
Intelligent Power Module Silicon N Channel IGBT High Power Switching Applications Motor Control Applications
TOSHIBA Intelligent Power Module Silicon N Channel IGBT
|
Toshiba Semiconductor
|
| MIG50J101H |
Intelligent Power Module Silicon N Channel IGBT High Power Switching Applications Motor Control Applications
TOSHIBA Intelligent Power Module Silicon N Channel IGBT
|
Toshiba Semiconductor
|
