| PART |
Description |
Maker |
| KMM366S1623AT-G8 KMM366S1623AT KMM366S1623AT-G0 KM |
16M x 64 SDRAM DIMM
16Mx64 SDRAM DIMM based on 8Mx8 4Banks, 4K Refresh, 3.3V Synchronous DRAMs with SPD
|
Samsung Electronic
SAMSUNG[Samsung semiconductor]
|
| HB52D88GB-F HB52D88GB-B6FL HB52D88GB-A6F HB52D88GB |
64 MB Unbuffered SDRAM Micro DIMM(64 MB 未缓冲同步DRAM DIMM)
x64 SDRAM Module X64的内存模
|
Hitachi,Ltd.
Electronic Theatre Controls, Inc.
Omron Electronics LLC Industrial Automation
|
| HB52R1289E22-B6B HB52R1289E22-A6B |
1 GB Registered SDRAM DIMM 1 GB Registered SDRAM DIMM (36 pcs of 64 M 4 Components) PC100 SDRAM
|
Elpida Memory
|
| EBS51RC4ACFC-7A EBS51RC4ACFC EBS51RC4ACFC-75 |
512MB Registered SDRAM DIMM 512MB的注册SDRAM的内
512MB Registered SDRAM DIMM 64M X 72 SYNCHRONOUS DRAM MODULE, 5.4 ns, DMA168
|
Elpida Memory, Inc.
ELPIDA[Elpida Memory]
|
| HYMD232646B8-H HYMD232646B8-K HYMD232646B8-L HYMD2 |
Unbuffered DDR SDRAM DIMM
512Mbit (64Mx8bit / 32Mx16bit) NAND Flash
32Mx64|2.5V|M/K/H/L|x8|DDR SDRAM - Unbuffered DIMM 256MB 32Mx64 | 2.5V的| /升| x8 | DDR SDRAM内存- 256MB的无缓冲DIMM
|
Hynix Semiconductor
http://
|
| HYS72V8200GR-8-E HYS72V16200GR-8-E HYS72V16201GR-8 |
16M X 72 SYNCHRONOUS DRAM MODULE, 6 ns, DMA168
内存| 32MX72 |CMOS |内存| 168线|塑料
SDRAM|16MX72|CMOS|DIMM|168PIN|PLASTIC
SDRAM|8MX72|CMOS|DIMM|168PIN|PLASTIC
|
INFINEON TECHNOLOGIES AG
|
| EBE10UE8ACWB EBE10UE8ACWB-6E-E EBE10UE8ACWB-8E-E E |
DDR DRAM MODULE, DMA240 ROHS COMPLIANT,DIMM-240
1GB Unbuffered DDR2 SDRAM DIMM
|
Elpida Memory, Inc.
|
| EBD12RB8ALFB-75 EBD12RB8ALFB-7A EBD12RB8ALFB-1A EB |
128MB Registered DDR SDRAM DIMM
SDRAM|DDR|16MX72|CMOS|DIMM|184PIN|PLASTIC 内存|复员| 16MX72 |的CMOS |内存| 184PIN |塑料
|
Elpida Memory
Murata Manufacturing Co., Ltd.
|
| HYMD264646AL8-H HYMD264646AL8-K HYMD264646A8-H HYM |
Unbuffered DDR SDRAM DIMM
64Mx64|2.5V|M/K/H/L|x16|DDR SDRAM - Unbuffered DIMM 512MB
|
Hynix Semiconductor
|
| HYMD264G726BL4M-K HYMD264G726BL4M-H HYMD264G726BL4 |
Low Profile Registered DDR SDRAM DIMM
DDR SDRAM - Registered DIMM 512MB
|
Hynix Semiconductor
|
