PART |
Description |
Maker |
EMC646SP16JS-45L EMC646SP16JS-45LF EMC646SP16JS-45 |
4Mx16 bit CellularRAM
|
Emerging Memory & Logic Solutions Inc Emerging Memory & Logic...
|
K3P7V1000 K3P7V1000B-YC K3P7VU1000B-YC |
64M-Bit (8Mx8 /4Mx16) CMOS MASK ROM 6400位(8Mx8 / 4Mx16)的CMOS掩膜ROM
|
Samsung Electronic SAMSUNG[Samsung semiconductor] SAMSUNG SEMICONDUCTOR CO. LTD. Samsung Semiconductor Co., Ltd.
|
K5T6432YT K5T6432YTM-T310 |
64Mbit (4Mx16) four bank NOR flash memory / 32Mbit (2Mx16) UtRAM, 100ns Multi-Chip Package MEMORY 64M Bit 4Mx16 Four Bank NOR Flash Memory / 32M Bit 2Mx16 UtRAM
|
Samsung Electronic SAMSUNG[Samsung semiconductor]
|
MT45W8MW16BGX |
8MEG X 16 Async/Page/Burst CellularRAM Memory
|
Micron Technology
|
HYE18P32160AC-125 HYE18P32160AC-15 HYE18P32160ACL9 |
M39012 MIL RF CONNECTOR 32M Synchronous Burst CellularRAM
|
Infineon Technologies A... Infineon Technologies AG
|
W986416DH |
SDRAM 4Mx16
|
Winbond Electronics
|
MT28C128532W18 |
(MT28C128532W18 / MT28C128564W18) 128Mb Multibank Burst Flash 32Mb ASYNC/PAGE CellularRAM COMBO Memory
|
Micron Technology
|
KMM5324004CSWG KMM5324004CSW |
4M x 32 DRAM SIMM Using 4Mx16, 4K Refresh, 5V
|
SAMSUNG[Samsung semiconductor]
|
AS4LC4M16S0 AS4LC4M16S0-10FTC AS4LC4M16S0-10TC AS4 |
3.3V 4Mx16 and 8Mx8 CMOS synchronous DRAM
|
ALSC[Alliance Semiconductor Corporation] ETC
|
KMM372F804BS |
8M x 72 DRAM DIMM with ECC using 4Mx16, 4Mx4 4K Refresh, 3.3V
|
Samsung Electronic Samsung semiconductor
|
KMM372V404BS |
4M x 72 DRAM DIMM with ECC using 4Mx16, 4Mx4 4K Refresh, 3.3V
|
Samsung Electronic SAMSUNG[Samsung semiconductor]
|