| PART |
Description |
Maker |
| GT15J321 |
Insulated Gate Bipolar Transistor Silicon N Channel IGBT High Power Switching Applications Fast Switching Applications
|
TOSHIBA
|
| AN203 |
Silicon-Gate Switching Functions Optimize Data Acquisition Front End
|
Vishay
|
| GT60M104 |
Insulated Gate Bipolar Transistor Silicon N Channel IGBT HIGH POWER SWITCHING APPLICATIONS
|
TOSHIBA
|
| GT20D201 |
INSULATED GATE BIPOLAR TRANSISTOR SILICON P CHANNEL IGBT HIGH POWER SWITCHING APPLICATION
|
TOSHIBA
|
| GT20J101 |
Insulated Gate Bipolar Transistor Silicon N Channel IGBT High Power Switching Applications
|
TOSHIBA
|
| GT50J327 |
TOSHIBA Insulated Gate Bipolar Transistor Silicon N Channel IGBT Current Resonance Inverter Switching Application
|
TOSHIBA[Toshiba Semiconductor]
|
| AP2346GN-HF AP2346GN-HF14 |
Capable of 1.8V Gate Drive, Lower Gate Charge
Fast Switching Performance
|
Advanced Power Electronics Corp.
|
| AP2344GEN-HF AP2344GEN-HF14 |
Capable of 1.8V Gate Drive, Lower Gate Charge
Fast Switching Performance
|
Advanced Power Electronics Corp.
|
| MC74HC132AD MC74HC132A MC54HC132A MC74HC132 MC74HC |
High?Performance Silicon?Gate CMOS
QUAD 2-INPUT NAND GATE WITH SCHMITT-TRIGGER INPUTS HIGH-PERFORMANCE SILICON-GATE CMOS
QUAD 2-INPUT NAND GATE WITH SCHLITT-TRLGGER INPUTS
From old datasheet system
|
Motorola, Inc
ON Semi
MOTOROLA[Motorola Inc]
|
| GT15J331 |
Insulated Gate Bipolar Transistor Silicon N Channel IGBT High Power Switching Applications Motor Control Applications
|
TOSHIBA
|
| GT10J301 |
INSULATED GATE BIPOLAR TRANSISTOR SILICON N CHANNEL IGBT HIGH POWER SWITCHING APPLICATIONS MOTOR CONTROL APPLICATIONS
|
TOSHIBA
|
