| PART |
Description |
Maker |
| VAM-6 |
Monolithic Amplifier DC-2 GHz
|
Mini-Circuits
|
| GVA-84-15 |
Monolithic Amplifier DC-7 GHz
|
Mini-Circuits
|
| GALI-52 |
Monolithic Amplifier DC-2 GHz
|
Mini-Circuits
|
| GVA-83 |
Monolithic Amplifier DC-7 GHz
|
Mini-Circuits
|
| RFSP2010 PRFS-P2010-006 P2010-DSH_E PRFS-P2010-005 |
The RFS P2010 power amplifier is a high-performance GaAs HBT IC designed for use in a transmit applications in the 2.4-2.5 GHz frequency ...
2.4-2.5 GHz Power Amplifier
From old datasheet system
2.4?2.5 GHz Power Amplifier
Single-band power amplifiers
2.42.5 GHz Power Amplifier 2400 MHz - 2500 MHz RF/MICROWAVE NARROW BAND MEDIUM POWER AMPLIFIER
|
ANADIGICS[ANADIGICS, Inc]
ANADIGICS[ANADIGICS Inc]
ANADIGICS Inc
ANADIGICS, Inc.
|
| MRFIC1805 |
1.9 GHz POWER AMPLIFIER GaAs MONOLITHIC INTEGRATED CIRCUIT
|
MOTOROLA[Motorola, Inc]
|
| MRFIC1807 |
1.8 GHz POWER AMPLIFIER AND TRANSMIT/RECEIVE SWITCH GaAs MONOLITHIC INTEGRATED CIRCUIT
|
MOTOROLA[Motorola, Inc]
|
| UPC2713T UPC2713T-E3 |
1.2 GHz LOW NOISE WIDE BAND AMPLIFIER SILICON BIPOLAR MONOLITHIC INTEGRATED CIRCUIT
|
NEC
|
| MRFIC1806 |
1.8 GHz DRIVER AMPLIFIER AND RAMP CIRCUIT GaAs MONOLITHIC INTEGRATED CIRCUIT
|
MOTOROLA[Motorola, Inc]
|
| UPC2714T-E3 UPC2715T UPC2714T |
1.8 GHz LOW POWER CONSUMPTION WIDE BAND AMPLIFIER SILICON BIPOLAR MONOLITHIC INTEGRATED CIRCUIT 1.8 GHz的低功耗宽带放大器硅双极单片集成电
LOW POWER CONSUMPTION SILICON MMIC AMPLIFIER
|
NEC, Corp.
NEC Corp.
NEC[NEC]
|
| VNA-21 |
Temp.: -25C to 70C/40C to 70C, Low Ripple & Noise, High Efficiency up to 76%,Single & Dual Ouputs, Regulated, Switching
Monolithic Amplifier 50OHM 0.5 to 2.5 GHz
|
MINI[Mini-Circuits]
|
