PART |
Description |
Maker |
IS41LV32256 IS41LV32256-28PQ IS41LV32256-28TQ IS41 |
x32 EDO Page Mode DRAM X32号,江户页面模式的DRAM 256K x 32 (8-Mbit) EDO DRAM 3.3V, 100/83/66 MHz(3.3V, 100/83/66 MHz,256K x 32带扩展数据输出动态RAM) 256K × 32兆位),江户内存3.3伏,100/83/66兆赫.3伏,100/83/66兆赫56K × 32带扩展数据输出动态内存) 256K x 32 (8-Mbit) EDO DYNAMIC RAM 3.3V, 100/83/66 MHz
|
Integrated Silicon Solution, Inc.
|
CY62147DV30L-55BVXE CY62147DV30LL-45BVXI CY62147DV |
4-Mbit (256K x 16) Static RAM 256K X 16 STANDARD SRAM, 45 ns, PDSO44 4-Mbit (256K x 16) Static RAM 256K X 16 STANDARD SRAM, 55 ns, PDSO44 4-Mbit (256K x 16) Static RAM 256K X 16 STANDARD SRAM, 55 ns, PBGA48 4-Mbit (256K x 16) Static RAM 4兆位56K × 16)静态RAM 4-Mbit (256K x 16) Static RAM 256K X 16 STANDARD SRAM, 70 ns, PBGA48
|
Cypress Semiconductor Corp. Cypress Semiconductor, Corp.
|
A28F400BR-TB A28F400BR-B AB28F400BR-T80 AB28F400BR |
4-MBIT (256K X 16/ 512K X 8) SmartVoltage BOOT BLOCK FLASH MEMORY FAMILY 4-MBIT (256K X 16, 512K X 8) SmartVoltage BOOT BLOCK FLASH MEMORY FAMILY Toggle Switch; Circuitry:DPDT; Switch Operation:On-On; Contact Current Max:6A; Actuator Style:Bat; Switch Terminals:Through Hole; Current Rating:3A; Leaded Process Compatible:Yes; Mounting Type:PCB; Features:Standard Actuator RoHS Compliant: Yes 4-MBIT (256K X 16. 512K X 8) SmartVoltage BOOT BLOCK FLASH MEMORY FAMILY 4-Mbit (256K x 16, 512K x 8) SmartVoltage boot block flash memory. Access speed 80 ns
|
Intel Corporation Intel Corp.
|
CY14B104L-BV45XIT CY14B104N-BV45XCT CY14B104N-BV45 |
4-Mbit (512K x 8/256K x 16) nvSRAM 256K X 16 NON-VOLATILE SRAM, 15 ns, PDSO44 4-Mbit (512K x 8/256K x 16) nvSRAM 256K X 16 NON-VOLATILE SRAM, 15 ns, PDSO54
|
Cypress Semiconductor Corp. Cypress Semiconductor, Corp.
|
CY62147EV18LL-55BVXI |
4-Mbit (256K x 16) Static RAM 256K X 16 STANDARD SRAM, 55 ns, PBGA48
|
Cypress Semiconductor Corp.
|
CY62146ELL-45ZSXA CY62146ELL-45ZSXI |
4-Mbit (256K x 16) Static RAM 256K X 16 STANDARD SRAM, 45 ns, PDSO44
|
Cypress Semiconductor Corp. Cypress Semiconductor, Corp.
|
F49L400BA |
4 Mbit (512K x 8/256K x 16) 3V Only CMOS Flash Memory 4兆位(为512k × 8/256K × 16V时仅闪存的CMOS
|
Elite Semiconductor Memory Technology, Inc.
|
IS41C16256-60K IS41LV16256-60K IS41C16256-25TI IS4 |
256K x 16 (4-MBIT) DYNAMIC RAM WITH EDO PAGE MODE 256K × 164兆位)的动态与江户页面模式内存
|
Integrated Circuit Solu... Cypress Semiconductor Corp. Integrated Circuit Solution Inc
|
49LF002 SST49LF003A-33-4C-NH SST49LF003A-33-4C-WH |
MB 6C 6#20 SKT PLUG 2 Mbit / 3 Mbit / 4 Mbit / 8 Mbit Firmware Hub 384K X 8 FLASH 3V PROM, 11 ns, PQCC32 2 Mbit / 3 Mbit / 4 Mbit / 8 Mbit Firmware Hub 256K X 8 FLASH 3V PROM, 11 ns, PQCC32 2 Mbit / 3 Mbit / 4 Mbit / 8 Mbit Firmware Hub 512K X 8 FLASH 3V PROM, 11 ns, PQCC32
|
Silicon Storage Technology Inc Silicon Storage Technology, Inc. SILICON STORAGE TECHNOLOGY INC
|
CY7C1327G-133AXC CY7C1327G-133AXI CY7C1327G-133BGC |
4-Mbit (256K x 18) Pipelined Sync SRAM 256K X 18 CACHE SRAM, 2.8 ns, PBGA119 4-Mbit (256K x 18) Pipelined Sync SRAM 256K X 18 CACHE SRAM, 2.6 ns, PBGA119 4-Mbit (256K x 18) Pipelined Sync SRAM 256K X 18 CACHE SRAM, 3.5 ns, PBGA119 4-Mbit (256K x 18) Pipelined Sync SRAM(4-Mb (256K x 18)管道式同步SRAM)
|
Cypress Semiconductor, Corp. Cypress Semiconductor Corp.
|
M68AW256ML70ZB6 M68AW256ML55ND1 M68AW256ML55ND1E M |
4 Mbit (256K x16) 3.0V Asynchronous SRAM 4兆位56K × 16.0V异步SRAM 256K X 16 STANDARD SRAM, 55 ns, PDSO44 256K X 16 STANDARD SRAM, 70 ns, PBGA48
|
ST Microelectronics STMICROELECTRONICS[STMicroelectronics] 意法半导 STMicroelectronics N.V.
|
UPD4265805G5-A50-7JD UPD4264805G5-A50-7JD UPD42658 |
18-Mbit QDR-II SRAM 2-Word Burst Architecture 1-Mbit (64K x 16) Static RAM 1M x 4 Static RAM x8 EDO Page Mode DRAM x8 EDO公司页面模式DRAM 4-Mbit (256K x 16) Static RAM
|
NEC TOKIN, Corp.
|