| PART |
Description |
Maker |
| 1SS350 |
UHF Detector, Mixer Applications Silicon Epitaxial Schottky Barrier Diode
|
Sanyo
|
| 1SS154 |
DIODE (UHF~S BAND MIXER/DETECTOR APPLICATIONS)
|
Toshiba Semiconductor
|
| ND4121-3G ND4133-5W ND4122-5W ND4131-5W |
Red, 5 GHz, silicon schottky mixer/detector diode
Blue, 26 GHz, silicon schottky mixer/detector diode
Red, 26 GHz, silicon schottky mixer/detector diode
Black, 12 GHz, silicon schottky mixer/detector diode
|
NEC
|
| KDV239 |
VCO for UHF Band Radio
VARIABLE CAPACITANCE DIODE SILICON EPITAXIAL PLANAR DIODE(VCO FOR UHF RADIO)
|
Korea Electronics (KEC)
KEC(Korea Electronics)
KEC Holdings
|
| 10EZ91 10EZ10 10EZ100 10EZ11 10EZ12 10EZ13 10EZ14 |
Silicon 10 WATT Zener Diodes
25 V, 10 W, SILICON, UNIDIRECTIONAL VOLTAGE REGULATOR DIODE, TO-220AB
Low Current Operation at 250 锛?ow Reverse Leakage,Low Noise Zener Diode
6 Pin, DIP, Phototransistor Detector w/ Base, CTR 125-250 @ 10mA, 10V Optocoupler
45 V, 10 W, SILICON, UNIDIRECTIONAL VOLTAGE REGULATOR DIODE, TO-220AB
Low Current Operation at 250?录A茂录?Low Reverse Leakage,Low Noise Zener Diode(250?录A氓路楼盲陆?莽?碌忙碌?茫??氓掳?氓??氓??忙录?莽?碌忙碌?茫??盲陆?氓?陋氓拢掳茫??茅陆?莽潞鲁盲潞?忙??莽庐隆)
30 V, 10 W, SILICON, UNIDIRECTIONAL VOLTAGE REGULATOR DIODE, TO-220AB
Low Current Operation at 250??A???Low Reverse Leakage,Low Noise Zener Diode(250??A?・￥?????μ?μ?????°????????????μ?μ?????????a?￡°???é???o3?o???????) 19 V, 10 W, SILICON, UNIDIRECTIONAL VOLTAGE REGULATOR DIODE, TO-220AB
6 Pin, DIP, Phototransistor Detector w/ Base, CTR 70-210 @ 10mA, 10V Optocoupler 50 V, 10 W, SILICON, UNIDIRECTIONAL VOLTAGE REGULATOR DIODE, TO-220AB
6 Pin, DIP, Phototransistor Detector w/ Base, CTR 100 min @ 10mA, 10V Optocoupler 51 V, 10 W, SILICON, UNIDIRECTIONAL VOLTAGE REGULATOR DIODE, TO-220AB
Low Current Operation at 250 ，Low Reverse Leakage,Low Noise Zener Diode 22 V, 10 W, SILICON, UNIDIRECTIONAL VOLTAGE REGULATOR DIODE, TO-220AB
6 Pin, DIP, Photodarlington Detector w/ Base CTR 100 min @ 10mA, 5V Optocoupler 14 V, 10 W, SILICON, UNIDIRECTIONAL VOLTAGE REGULATOR DIODE, TO-220AB
4.7 V, 10 W, SILICON, UNIDIRECTIONAL VOLTAGE REGULATOR DIODE, TO-220AB TO-220, 3 PIN
4.3 V, 10 W, SILICON, UNIDIRECTIONAL VOLTAGE REGULATOR DIODE, TO-220AB TO-220, 3 PIN
3.9 V, 10 W, SILICON, UNIDIRECTIONAL VOLTAGE REGULATOR DIODE, TO-220AB TO-220, 3 PIN
7.5 V, 10 W, SILICON, UNIDIRECTIONAL VOLTAGE REGULATOR DIODE, TO-220AB TO-220, 3 PIN
9.1 V, 10 W, SILICON, UNIDIRECTIONAL VOLTAGE REGULATOR DIODE, TO-220AB TO-220, 3 PIN
8.2 V, 10 W, SILICON, UNIDIRECTIONAL VOLTAGE REGULATOR DIODE, TO-220AB TO-220, 3 PIN
6.8 V, 10 W, SILICON, UNIDIRECTIONAL VOLTAGE REGULATOR DIODE, TO-220AB TO-220, 3 PIN
5.1 V, 10 W, SILICON, UNIDIRECTIONAL VOLTAGE REGULATOR DIODE, TO-220AB TO-220, 3 PIN
5.6 V, 10 W, SILICON, UNIDIRECTIONAL VOLTAGE REGULATOR DIODE, TO-220AB TO-220, 3 PIN
6.2 V, 10 W, SILICON, UNIDIRECTIONAL VOLTAGE REGULATOR DIODE, TO-220AB TO-220, 3 PIN
16 Pin, DIP, Quad Phototransistor Detector, BVCEO 35V, CTR 50-600 @ 5mA, 5V Optocoupler
Zener Voltage Regulator Diode
6 Pin, DIP, Phototransistor Detector w/ Base, CTR 20 min @ 10mA, 5V Optocoupler
62 V, 10 W, SILICON, UNIDIRECTIONAL VOLTAGE REGULATOR DIODE, TO-220AB
|
MICROSEMI CORP-SCOTTSDALE
Renesas Electronics, Corp.
Microsemi, Corp.
齐纳二极
MICROSEMI[Microsemi Corporation]
|
| BB555 BB555-02V BB535 |
Varactordiodes - Silicon variable capacitance diode for UHF TV tuners
Varactordiodes - Silicon variable capacitance diode for UHF and TV/TR tuners
Silicon Tuning Diode
|
Infineon Technologies AG
Siemens Semiconductor Group
|
| 1SS199 1SS199MHD |
Silicon Schottky Barrier Diode for Various Detector, High Speed Switching 硅肖特基二极管各种探测器，高速开
Silicon Schottky Barrier Diode for Various Detector High Speed Switching
Silicon Schottky Barrier Diode for Various Detector/ High Speed Switching
|
Hitachi,Ltd.
HITACHI[Hitachi Semiconductor]
|
| KDV273 |
VARIABLE CAPACITANCE DIODE SILICON EPITAXIAL PLANAR DIODE(VCO FOR UHF/VHF BAND)
|
KEC(Korea Electronics)
|
| 1N5472A 1N5466C TX-1N5469C TX-1N5468B TX-1N5446C 1 |
VHF-UHF BAND, 47 pF, 30 V, SILICON, ABRUPT VARIABLE CAPACITANCE DIODE, DO-7
VHF-UHF BAND, 18 pF, 30 V, SILICON, ABRUPT VARIABLE CAPACITANCE DIODE, DO-7
VHF-UHF BAND, 27 pF, 30 V, SILICON, ABRUPT VARIABLE CAPACITANCE DIODE, DO-7
VHF-UHF BAND, 22 pF, 30 V, SILICON, ABRUPT VARIABLE CAPACITANCE DIODE, DO-7
VHF-UHF BAND, 100 pF, 30 V, SILICON, ABRUPT VARIABLE CAPACITANCE DIODE, DO-7
VHF-UHF BAND, 10 pF, 30 V, SILICON, ABRUPT VARIABLE CAPACITANCE DIODE, DO-7
VHF-UHF BAND, 68 pF, 30 V, SILICON, ABRUPT VARIABLE CAPACITANCE DIODE, DO-7
VHF-UHF BAND, 20 pF, 30 V, SILICON, ABRUPT VARIABLE CAPACITANCE DIODE, DO-7
VHF-UHF BAND, 6.8 pF, 30 V, SILICON, ABRUPT VARIABLE CAPACITANCE DIODE, DO-7
VHF-UHF BAND, 56 pF, 30 V, SILICON, ABRUPT VARIABLE CAPACITANCE DIODE, DO-7
VHF-UHF BAND, 39 pF, 30 V, SILICON, ABRUPT VARIABLE CAPACITANCE DIODE, DO-7
VHF-UHF BAND, 8.2 pF, 30 V, SILICON, ABRUPT VARIABLE CAPACITANCE DIODE, DO-7
VHF-UHF BAND, 33 pF, 30 V, SILICON, ABRUPT VARIABLE CAPACITANCE DIODE, DO-7
VHF-UHF BAND, 12 pF, 30 V, SILICON, ABRUPT VARIABLE CAPACITANCE DIODE, DO-7
|
|
| MA2S376 |
Silicon epitaxial planar type UHF BAND, 15 pF, 6 V, SILICON, VARIABLE CAPACITANCE DIODE
|
Panasonic, Corp.
PANASONIC[Panasonic Semiconductor]
|
|
