| PART |
Description |
Maker |
| BSS123 BSS123-T |
150 mA, 100 V, N-CHANNEL, Si, SMALL SIGNAL, MOSFET
N-channel TrenchMOS(TM) transistor Logic Level FET
N-channel TrenchMOS TM transistor
N-channel TrenchMOS transistor
|
Philips
NXP Semiconductors
|
| BSP030-04 BSP030 |
N-channel TrenchMOS intermediate level FET N沟道 TrenchMOS 中间级场效应
N-channel enhancement mode field-effect transistor
From old datasheet system
|
NXP Semiconductors N.V.
Philips
|
| PHP191NQ06LT PHB191NQ06LT |
Logic level N-channel enhancement mode field-effect transistor in a plastic package using TrenchMOS technology
PHP/PHB191NQ06LT; N-channel Trenchmos (tm) logic level FET
|
NXP Semiconductors
PHILIPS[Philips Semiconductors]
|
| PSMN130-200D PSMN130-200D_HG_3 |
N-channel TrenchMOS(tm) transistor
From old datasheet system
N-channel TrenchMOS ? transistor
N-channel TrenchMOS transistor
|
PHILIPS[Philips Semiconductors]
NXP Semiconductors
|
| PHD108NQ03LT PHB108NQ03LT PHP_PHB_PHD108NQ03LT-02 |
TrenchMOS(tm)logic level FET
From old datasheet system
TrenchMOS TM logic level FET
TrenchMOS logic level FET 75 A, 25 V, 0.0075 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-252AA
|
PHILIPS[Philips Semiconductors]
NXP Semiconductors N.V.
|
| PHP11N06LT PHB11N06LT PHD11N06LT PHB11N06LT118 |
10.3 A, 55 V, 0.15 ohm, N-CHANNEL, Si, POWER, MOSFET PLASTIC, D2PAK-3
N-channel TrenchMOS TM transistor Logic level FET
N-channel TrenchMOS transistor Logic level FET
|
NXP Semiconductors N.V.
PHILIPS[Philips Semiconductors]
|
| BUK7606-55 BUK7606-55A |
TrenchMOS（TM）transistor Standard level FET(TrenchMOS（TM）晶体管标准电平FET)
Aluminum Snap-In Capacitor; Capacitance: 2200uF; Voltage: 50V; Case Size: 22x25 mm; Packaging: Bulk
TrenchMOSTM）transistor Standard level FET(TrenchMOSTM）晶体管标准电平FET) TrenchMOS（商标）一级标准场效应晶体管（TrenchMOS（商标）晶体管标准电平场效应管）
|
Philips Semiconductors
3M Company
|
| PHN210T |
Dual N-channel TrenchMOS intermediate level FET 3.4 A, 30 V, 0.1 ohm, 2 CHANNEL, N-CHANNEL, Si, POWER, MOSFET, MS-012AA
|
NXP Semiconductors N.V.
|
| 2N7002T |
N-channel TrenchMOS FET - Configuration: Single N-channel ; I<sub>D</sub> DC: 0.3 A; R<sub>DS(on)</sub>: 5000@10V5300@4.5V mOhm; V<sub>DS</sub>max: 60 V 300 mA, 60 V, N-CHANNEL, Si, SMALL SIGNAL, MOSFET, TO-236AB
|
NXP Semiconductors N.V.
|
| PHT11N06T PHT11N06 |
TrenchMOS transistor Standard level FET 4.9 A, 55 V, 0.04 ohm, N-CHANNEL, Si, POWER, MOSFET
TrenchMOS transistor Logic level FET
|
NXP Semiconductors N.V.
PHILIPS[Philips Semiconductors]
|
| PHP73N06 PHP73N06T PHP73N06T127 PHB73N06T |
TrenchMOS(tm) standard level FET
TrenchMOS (tm) standard level FET
73 A, 60 V, 0.014 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-220AB
|
Philips
NXP SEMICONDUCTORS
|
| PSMN020-150W PSMN020 |
N-channel TrenchMOS? transistor
N-channel TrenchMOS transistor(N沟道 TrenchMOS晶体
|
NXP Semiconductors
|
