| PART |
Description |
Maker |
| MTP10N60E7 ON2541 MTP10N60E7-D |
TMOS 7 E-FET™ High Energy Power FET
TMOS 7 E-FET High Energy Power FET N-Channel Enhancement-Mode Silicon Gate
From old datasheet system
TMOS POWER FET 10 AMPERES 600 VOLTS
|
ON Semiconductor
|
| MTB10N60E7 ON2391 MTB10N60E7-D MTB10N60E7T4 |
TMOS 7 E-FET High Energy Power FET N-Channel Enhancement-Mode Silicon Gate
TMOS 7 E-FET™ High Energy Power FET
From old datasheet system
TMOS POWER FET 10 AMPERES 600 VOLTS
|
ON Semiconductor
|
| CS5467-ISZ |
Four-channel Power/Energy IC
|
Cirrus Logic, Inc.
|
| IRFF9132 IRFF9130 |
Avalanche-Energy-Rated P-Channel Power MOSFETs
|
New Jersey Semi-Conduct...
|
| IRF440R IRFP442R IRFP443R IRFP441R |
Avalanche Energy Rated N-Channel Power MOSFETs
|
New Jersey Semi-Conductor Products, Inc.
New Jersey Semi-Conductor P...
|
| MAL222091001E3 MAL222090004E3 |
Electrical Double Layer Energy Storage Capacitors Power and Energy Versions
|
Vishay Siliconix
|
| JE93I9HTR5 JE9 JE9112HR1 JE9112HR2 JE9112HR3 JE911 |
Digital Media System-on-Chip (DMSoC) 338-NFBGA 大功率磁保持继电
2.0mV Quad Ultra Micropower Rail-to-Rail CMOS Operational Amplifier, 24L SOIC 大功率磁保持继电
HIGH POWER LATCHING RELAY 大功率磁保持继电
Energy Harvesting Module w/ connector, 1.8V to 3.6V, 4.6mJ, 68msec@25mA
Energy Harvesting Module w/ connector, 3.1V to 5.2V, 55mJ, 88msec@150mA
Energy Harvesting Module w/ connector, 3.1V to 5.2V, 8.3mJ, 80msec@25mA
Energy Harvesting Module w/ connector, 1.8V to 3.6V, 30mJ, 75msec@150mA
SOIC socket added to Adapter Module
|
Hongfa Relay
???瀹???靛０?′唤??????
Xiamen Hongfa Electroacoustic Co., Ltd.
厦门宏发电声股份有限公司
HONGFA[Hongfa Technology]
|
| IRF5NJ540 |
Avalanche Energy Ratings
POWER MOSFET N-CHANNEL(Vdss=100V, Rds(on)=0.052ohm, Id=22A*)
SURFACE MOUNT (SMD-0.5)100V, N-CHANNEL
100V Single N-Channel Hi-Rel MOSFET in a SMD-0.5 package
|
IRF[International Rectifier]
|
| EM4-DINAV93DXR EM4-DINAV13ADR EM4-DINAV13AOR EM4-D |
Energy Management Energy Meter with plug-in Output Modules
|
http://
List of Unclassifed Manufacturers
ETC[ETC]
List of Unclassifed Man...
|
| MTB2N40E MTB2N40E-D |
TMOS E-FET High Energy Power FET D2PAK for Surface Mount N-Channel Enhancement-Mode Silicon Gate
TMOS POWER FET 2.0 AMPERES 400 VOLTS
|
ON Semiconductor
MOTOROLA[Motorola, Inc]
|
| CBC-EVAL-09 |
EnerChip Energy Processor for Energy Harvesting Applications
|
Cymbet Corporation
|
| MTB4N80E1_D ON2427 MTB4N80E1 MTB4N80E1-D |
TMOS E-FET High Energy Power FET D2PAK-SL Straight Lead N-Channel Enhancement-Mode Silicon Gate
TMOS POWER FET 4.0 AMPERES 800 VOLTS
From old datasheet system
|
ON Semiconductor
MOTOROLA[Motorola, Inc]
|
