| PART |
Description |
Maker |
| APM2140-P29 |
Medium Power Amplifier Module
|
Advanced Semiconductor Business Inc.
|
| APM1855-P29 |
Medium Power Amplifier Module
|
Advanced Semiconductor Business Inc.
|
| AWT6308R08 AWT6308RM9Q7 |
HELP2TM PCS/CDMA 3.4V/28dBm Linear Power Amplifier Module
1850 MHz - 1910 MHz RF/MICROWAVE NARROW BAND MEDIUM POWER AMPLIFIER
|
ANADIGICS, Inc
ANADIGICS INC
|
| AWT6277RM20P9 AWT6277RM20P8 |
1920 MHz - 1980 MHz RF/MICROWAVE NARROW BAND MEDIUM POWER AMPLIFIER 4 X 4 MM, 1 MM HEIGHT, ROHS COMPLIANT, MINIATURE, M-20, 10 PIN
HELPTM IMT/WCDMA 3.4 V/28.5 dBm Linear Power Amplifier Module
|
ANADIGICS, Inc.
|
| APM1842-P29-13 |
Low Noise and High OIP3 Medium Power Amplifier Module
|
Advanced Semiconductor ...
|
| APM2140-P29-13 |
Low Noise and High OIP3 Medium Power Amplifier Module
|
Advanced Semiconductor Busi...
|
| 2SC3279 E000814 SC3279 2SC3269 |
Silicon NPN transistor for strobo flash applications and medium power amplifier applications
STOROBE FLASH APPLICATIONS MEDIUM POWER AMPLIFIER APPLICATIONS
From old datasheet system
NPN EPITAXIAL TYPE (STOROBO FLASH, MEDIUM POWER AMPLIFIER APPLICATIONS)
NPN EPITAXIAL TYPE (STOROBO FLASH/ MEDIUM POWER AMPLIFIER APPLICATIONS)
|
Toshiba Corporation
TOSHIBA[Toshiba Semiconductor]
|
| SBM52414X SBM52414Z SBM51414G SBM51414N SBM51414Z |
Medium Power BIDI Optical Standard Module 1310 nm Emitting, 1550 nm Receiving 中功率比迪光学标准模310纳米发光550纳米接收
Transceiver
Components and FTTx solutions - Tx 1310nm/Rx 1550nm, Medium Power
|
INFINEON[Infineon Technologies AG]
|
| 2SC3420 E000842 |
NPN EPITAXIAL TYPE (STOROBO FLASH, MEDIUM POWER AMPLIFIER APPLICATIONS)
STOROBE FLASH APPLICATIONS MEDIUM POWER AMPLIFIER APPLICATIONS
From old datasheet system
|
Toshiba Corporation
TOSHIBA[Toshiba Semiconductor]
|
| RFS1006 PRFS-1006-0007 PRFS-1006-0008 PRFS-1006-00 |
3.4-3.6 GHz Power Amplifier 3400 MHz - 3600 MHz RF/MICROWAVE NARROW BAND MEDIUM POWER AMPLIFIER
3.4-3.6 GHz Power Amplifier 3号至三月六日GHz功率放大
Single-band power amplifiers
The RFS1006 power amplifier is a high-power, high-performance GaAs MESFET IC designed for use in a transmit applications in the 3.4-3.6 ...
|
ANADIGICS, Inc.
ANADIGICS[ANADIGICS, Inc]
ANADIGICS[ANADIGICS Inc]
|
| 2SC5720 |
Transistor Silicon NPN Epitaxial Planar Type MEDIUM POWER AMPLIFIER APPLICATIONS STOROBO FLASH APPLICATIONS
MEDIUM POWER AMPLIFIER APPLICATIONS STOROBO FLASH APPLICATIONS 介质功率放大器应STOROBO Flash应用
|
Toshiba Corporation
Toshiba, Corp.
|
