| PART |
Description |
Maker |
| 2SJ212 |
MOS Fied Effect Transistor
|
Guangdong Kexin Industrial Co.,Ltd
|
| 2SJ207 |
MOS Fied Effect Transistor
|
Guangdong Kexin Industrial Co.,Ltd
|
| 2SJ213 |
MOS Fied Effect Transistor
|
Guangdong Kexin Industrial Co.,Ltd
|
| TPCS8201 |
Field Effect Transistor Silicon N Channel MOS Type (U-MOS II) Lithium Ion Battery Applications Portable Equipment Applications Notebook PCs
TOSHIBA Field Effect Transistor Silicon N Channel MOS Type (U-MOS )
|
TOSHIBA[Toshiba Semiconductor]
|
| TPCP8402 |
TOSHIBA Field Effect Transistor Silicon P, N Channel MOS Type (U-MOS IV / U-MOS III)
|
TOSHIBA[Toshiba Semiconductor]
|
| K3296 2SK3296 2SK3296-ZK 2SK3296-ZJ 2SK3296-S |
TRANSISTOR,MOSFET,N-CHANNEL,20V V(BR)DSS,35A I(D),TO-220AB
MOS FIELD EFFECT TRANSISTOR
Power MOS FET
|
NEC Corp.
NEC[NEC]
|
| 2SK3078A |
Field Effect Transistor Silicon N Channel MOS Type VHF/UHF Band Amplifier Applications
TOSHIBA Field Effect Transistor Silicon N Channel MOS Type
|
TOSHIBA[Toshiba Semiconductor]
|
| UPA1870GR-9JG UPA1870 UPA1870GR-9JG-E1 UPA1870GR-9 |
N-channel enhancement type MOS FET
N-CHANNEL MOS FIELD EFFECT TRANSISTOR FOR SWITCHING
TRANSISTOR | MOSFET | HALF BRIDGE | 20V V(BR)DSS | 6A I(D) | SO
|
NEC[NEC]
|
| TPCF8302 |
TOSHIBA Field Effect Transistor Silicon P Channel MOS Type (U-MOS IV)
|
Toshiba Semiconductor
|
| 2SJ648 |
P-Channel enhancement MOS FET for load sw
MOS FIELD EFFECT TRANSISTOR
|
NEC
|
