| PART |
Description |
Maker |
| M58LR128KC765 M58LR128KD |
128 or 256 Mbit (x16, mux I/O, multiple bank, multilevel interface, burst) 1.8 V supply Flash memories
|
Numonyx B.V
|
| NAND01G-A NAND01GW3A NAND01GW3A0AN6 |
128 Mbit, 256 Mbit, 512 Mbit, 1 Gbit (x8/x16) 528 Byte/264 Word Page, 1.8V/3V, NAND Flash Memories
|
STMicroelectronics
|
| IS42LS16800A-10TI IS42S81600A-7T IS42LS81600A-7TI |
Aluminum Electrolytic Capacitor; Capacitor Type:Computer Grade; Voltage Rating:350VDC; Capacitor Dielectric Material:Aluminum Electrolytic; Operating Temperature Range:-40 C to 85 C; Capacitance:2400uF RoHS Compliant: Yes
16Meg x 8, 8Meg x16 & 4Meg x 32 128-MBIT SYNCHRONOUS DRAM 16Meg × 8Meg x16
16Meg x 8, 8Meg x16 & 4Meg x 32 128-MBIT SYNCHRONOUS DRAM
|
Integrated Circuit Solu...
Integrated Silicon Solution, Inc.
Intersil, Corp.
Integrated Circuit Solution...
|
| M36W0R6050B3 M36W0R6050B3ZAQE M36W0R6050B3ZAQF M36 |
SPECIALTY MEMORY CIRCUIT, PBGA107
64-Mbit (4 Mbits 隆驴16, multiple bank, burst) Flash memory and 16-Mbit (1 Mbit 隆驴16) or 32-Mbit (2 Mbits x16) PSRAM MCP
512 Mbit (x16, Multiple Bank, Multi-Level, Burst) Flash memory 128 Mbit (Burst) PSRAM, 1.8V supply, Multi-Chip Package
64-Mbit (4 Mbits 】16, multiple bank, burst) Flash memory and 16-Mbit (1 Mbit 】16) or 32-Mbit (2 Mbits x16) PSRAM MCP
|
Numonyx B.V
|
| M36LLR8760 M36L0R7050 M36L0R7050B0ZAQE M36L0R7050B |
128 Mbit (Multiple Bank, Multi-Level, Burst) Flash Memory 32 Mbit (2M x16) PSRAM, 1.8V Supply Multi-Chip Package 128兆位（多银行，多层次，突发）闪存32兆位00万16）移动存储芯片，1.8V电源多芯片封
CAP 2.2PF 200V 0.5PF C0H DIP-2 BULK S-MIL-C-39014
ER 23C 16 12 8 4 SKT RECP WALL
CAP 0.1UF 50V 10% X7R DIP-2 BULK P-MIL-C-39014
128 Mbit (Multiple Bank / Multi-Level / Burst) Flash Memory 32 Mbit (2M x16) PSRAM
From old datasheet system
|
STMicroelectronics N.V.
ST Microelectronics
意法半导
STMICROELECTRONICS[STMicroelectronics]
|
| M27C1024-10XF7 M27C1024-12XF7 M27C1024-15XF7 M27C1 |
1-Mbit (64Kb x16) UV EPROM, 100ns
1-Mbit (64Kb x16) UV EPROM, 120ns
1-Mbit (64Kb x16) UV EPROM, 150ns
1-Mbit (64Kb x16) UV EPROM, 200ns
1-Mbit (64Kb x16) UV EPROM, 35ns
1-Mbit (64Kb x16) UV EPROM, 45ns
1-Mbit (64Kb x16) UV EPROM, 55ns
1-Mbit (64Kb x16) UV EPROM, 70ns
1-Mbit (64Kb x16) UV EPROM, 80ns
1-Mbit (64Kb x16) UV EPROM, 90ns
1-Mbit (64Kb x16) OTP EPROM, 120ns
1-Mbit (64Kb x16) OTP EPROM, 70ns
1-Mbit (64Kb x16) OTP EPROM, 90ns
1-Mbit (64Kb x16) OTP EPROM, 55ns
1-Mbit (64Kb x16) OTP EPROM, 45ns
1-Mbit (64Kb x16) OTP EPROM, 35ns
1-Mbit (64Kb x16) OTP EPROM, 150ns
1-Mbit (64Kb x16) OTP EPROM, 100ns
|
SGS Thomson Microelectronics
|
| IS42S16800A1-7TL |
8Meg x16 128-MBIT SYNCHRONOUS DRAM
|
Integrated Silicon Solution, Inc.
|
| M58MR032C M58MR032C100ZC6T M58MR032C120ZC6T M58MR0 |
32 Mbit 2Mb x16, Mux I/O, Dual Bank, Burst 1.8V Supply Flash Memory
|
STMICROELECTRONICS[STMicroelectronics]
|
| IC42S16800D-7TL IS42S81600D-6T IS42S81600D-6TL IS4 |
16Meg x 8, 8Meg x16 128-MBIT SYNCHRONOUS DRAM
|
天津新技术产业园区管理委员会
Integrated Silicon Solution, Inc
|
| 42S16800A IS42S16800A IS42S16800A-6T IS42S16800A-7 |
16Meg x 8/ 8Meg x16 & 4Meg x 32 128-MBIT SYNCHRONOUS DRAM
|
Integrated Silicon Solution Inc
|
| M58LW128B150N6T M58LW128B150N1T M58LW128A150N6E M5 |
8M X 16 FLASH 3V PROM, 150 ns, PDSO56
128 Mbit 8Mb x16 or 4Mb x32, Uniform Block, Burst 3V Supply Flash Memories 128兆位Mb x16Mb的X32号，统一座，突发3V电源闪存
128 Mbit 8Mb x16 or 4Mb x32, Uniform Block, Burst 3V Supply Flash Memories 128兆位8Mb x16Mb的X32号，统一座，突发3V电源闪存
RECEPTACLE HOUSING, 5WAY
|
ST Microelectronics
STMicroelectronics N.V.
意法半导
|
| M36D0R6040T0ZAIT M36D0R6040B0ZAI M36D0R6040B0ZAIE |
64 Mbit (4Mb x16, Multiple Bank, Page) Flash Memory and 16 Mbit (1Mb x16) PSRAM, Multi-Chip Package
|
意法半导
STMICROELECTRONICS[STMicroelectronics]
ST Microelectronics
|
