| PART |
Description |
Maker |
| MIE-324H4 324H4 |
GaAlAs T-1 PACKAGE INFRARED EMITTING DIODE 发动器的T 1包红外发光二极管
Infrared Emitting Diodes (IRED) 红外发光二极管（登记合格决定
|
Unity Opto Technology Co., Ltd.
Vishay Intertechnology, Inc.
UOT[Unity Opto Technology]
|
| TSHA620. TSHA6200 TSHA620 TSHA6203 TSHA6201 TSHA62 |
GaAlAs Infrared Emitting Diodes in 5 mm (T-13/4) Package 红外发光二极管的GaAIAs在？5毫米（翻 13 / 4）包
GaAlAs Infrared Emitting Diodes in ? 5 mm (T?1 3/4)Package
GaAlAs Infrared Emitting Diodes in 5 mm (T-13/4) Package
From old datasheet system
GaAlAs Infrared Emitting Diodes in ?5 mm (T-13/4) Package
GaAlAs Infrared Emitting Diodes in ?5 mm (T-13/4) Package
|
Vishay Intertechnology, Inc.
Vishay Intertechnology,Inc.
TFUNK[Vishay Telefunken]
VISAY[Vishay Siliconix]
|
| MIE-556L3U MIE-546L3U 556L3U |
Infrared Emitting Diodes (UL Listed)
GaAlAs T-1 3/4 PACKAGE INFRARED EMITTING DIODE
|
UOT[Unity Opto Technology]
|
| TSMF3700 |
GaAlAs/GaAlAs Infrared Emitting Diode in SMT Package
|
Vishay Siliconix
|
| OP233 OP232 OP231 |
GaAs HERMETIC INFRARED EMITTING DIODES
GaALAs Hermetic Infrared Emitting Diode(铝砷化镓密封红外发光二极工作温度范围-65 125
|
OPTEK Technologies
Optek Technology
|
| HE8812SG |
GaAlAs Infrared Emitting Diode
|
HITACHI[Hitachi Semiconductor]
|
| LTE-4206 |
GaAlAs T-1 Standard 3 Infrared Emitting Diode
|
Lite-On Technology
|
| LTE4206 LTE-4206C LTE-4216 LTE-4216C |
GaAlAs T-1 Standard 3 Infrared Emitting Diode
|
Lite-On Technology Corporation
|
| LNA4602L |
GaAlAs Infrared Light Emitting Diode
|
Panasonic Semiconductor
|
| LN184 |
GaAlAs Infrared Light Emitting Diode
|
Panasonic Corporation
PANASONIC[Panasonic Semiconductor]
|
| LN189S |
GaAlAs Infrared Light Emitting Diode
|
PANASONIC[Panasonic Semiconductor]
|
| MIE-554L3 |
GaAlAs T-1 3/4 PACKAGE INFRARED EMITTING DIODE
|
UOT[Unity Opto Technology]
|
