| PART |
Description |
Maker |
| MT6C03AE |
TRANSISTOR SILICON NPN EPITAXIAL PLANAR TYPE VHF~UHF BAND LOW NOISE AMPLIFIER APPLICATIONS
TOSHIBA TRANSISTOR SILICON NPN EPITAXIAL PLANAR TYPE
|
TOSHIBA[Toshiba Semiconductor]
|
| MT3S03AU |
TRANSISTOR SILICON NPN EPITAXIAL PLANAR TYPE VHF~UHF BAND LOW NOISE AMPLIFIER APPLICATIONS
TOSHIBA TRANSISTOR SILICON NPN EPITAXIAL PLANAR TYPE
|
Toshiba Semiconductor
|
| MT3S03AT |
TRANSISTOR SILICON NPN EPITAXIAL PLANAR TYPE VHF~UHF BAND LOW NOISE AMPLIFIER APPLICATIONS
TOSHIBA TRANSISTOR SILICON NPN EPITAXIAL PLANAR TYPE
|
Toshiba Semiconductor
|
| UP03312 |
Silicon NPN epitaxial planar type (Tr1), Silicon PNP epitaxial planar type (Tr2) 100 mA, 50 V, 2 CHANNEL, NPN AND PNP, Si, SMALL SIGNAL TRANSISTOR
|
Panasonic, Corp.
|
| KTX411TY KTX411T KTX411TGR |
EPITAXIAL PLANAR NPN TRANSISTOR SILICON EPITAXIAL PLANAR TYPE DIODE
|
KEC[KEC(Korea Electronics)]
|
| XN0A311G |
Silicon NPN epitaxial planar type (Tr1), Silicon PNP epitaxial planar type (Tr2)
|
Panasonic
|
| BD165 |
(BD165 - BD169) SILIZIUM-NPN-EPITAXIAL-PLANAR-LEISTUNGSTRANSISTOREN SILICON NPN EPITAXIAL PLANAR POWRE TRANSISTORS
|
ETC
|
| 2SC2098 |
NPN EPITAXIAL PLANAR TYPE
|
New Jersey Semi-Conductor Products, Inc.
|
| 2SC1946 |
NPN EPITAXIAL PLANAR TYPE
|
New Jersey Semi-Conductor Products, Inc.
|
| 2SC2800 |
NPN Epitaxial Planar Type
|
Mitsubishi Electric
|
| 2SC1967 |
NPN EPITAXIAL PLANAR TYPE
|
Mitsubishi Electric Semiconductor
|
| KRC281M KRC286M KRC282M KRC283M KRC284M KRC285M |
CAP, TANT, 100UF, 10%, 16V, E
Built in Bias Resistor
EPITAXIAL PLANAR NPN TRANSISTOR (SWITCHING, AUDIO MUTING)
(KRC281M - KRC286M) EPITAXIAL PLANAR NPN TRANSISTOR
|
KEC Holdings
Korea Electronics (KEC)
KEC[KEC(Korea Electronics)]
|
