| PART |
Description |
Maker |
| HI-506A HI1-0506A-2 HI1-0506A-5 HI1-0506A-8 HI1-05 |
16-Channel, 8-Channel, Differential 8-Channel and Differential 4-Channel, CMOS Analog MUXs with Active Overvoltage Protection 16-CHANNEL, SGL ENDED MULTIPLEXER, CDIP28
16-Channel, 8-Channel, Differential 8-Channel and Differential 4-Channel, CMOS Analog MUXs with Active Overvoltage Protection 8-CHANNEL, SGL ENDED MULTIPLEXER, CDIP16
16-Channel, 8-Channel, Differential 8-Channel and Differential 4-Channel, CMOS Analog MUXs with Active Overvoltage Protection 4-CHANNEL, DIFFERENTIAL MULTIPLEXER, PDIP16
16-Channel, 8-Channel, Differential 8-Channel and Differential 4-Channel, CMOS Analog MUXs with Active Overvoltage Protection 4-CHANNEL, DIFFERENTIAL MULTIPLEXER, CDIP16
16-Channel, 8-Channel, Differential 8-Channel and Differential 4-Channel, CMOS Analog MUXs with Active Overvoltage Protection 8-CHANNEL, DIFFERENTIAL MULTIPLEXER, CDIP28
16-Channel/ 8-Channel/ Differential 8-Channel and Differential 4-Channel/ CMOS Analog MUXs with Active Overvoltage Protection
64 MACROCELL 3.3 VOLT ISP CPLD - NOT RECOMMENDED for NEW DESIGN
From old datasheet system
|
Intersil, Corp.
INTERSIL[Intersil Corporation]
|
| ISB-A27-0 |
150 mA, 30 V, 4 CHANNEL, N-CHANNEL, Si, SMALL SIGNAL, MOSFET
Ultrathin Miniature Package 4-channel N-channel MOSFET Array
|
Sanyo Semicon Device
|
| HI3-509A HI3-0506A-5 HI3-0507A-5 HI3-0508A-5 HI1-0 |
16-Channel, 8-Channel, Differential 8-Channel and Differential 4-Channel, CMOS Analog MUXs with Active Overvoltage Protection
|
HARRIS[Harris Corporation]
|
| PHN210T |
Dual N-channel TrenchMOS intermediate level FET 3.4 A, 30 V, 0.1 ohm, 2 CHANNEL, N-CHANNEL, Si, POWER, MOSFET, MS-012AA
|
NXP Semiconductors N.V.
|
| FDP100N10 |
N-Channel PowerTrenchMOSFET 75 A, 100 V, 0.01 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-220AB
N-Channel PowerTrench㈢ MOSFET
N-Channel PowerTrench? MOSFET
|
Fairchild Semiconductor, Corp.
|
| SIZ702DT-T1-GE3 |
N-Channel 30-V (D-S) MOSFETs
13.8 A, 30 V, 0.012 ohm, 2 CHANNEL, N-CHANNEL, Si, POWER, MOSFET 6 X 3.70 MM, HALOGEN FREE AND ROHS COMPLIANT, POWERPAIR-6
|
Vishay Siliconix
Vishay Intertechnology, Inc.
|
| 6AM14 |
Silicon N-Channel/P-Channel Power MOS FET Array 硅N-Channel/P-Channel功率MOS FET阵列
|
Hitachi,Ltd.
HITACHI[Hitachi Semiconductor]
|
| SIZ710DT-T1-GE3 |
N-Channel 20 V (D-S) MOSFETs
16 A, 20 V, 0.0068 ohm, 2 CHANNEL, N-CHANNEL, Si, POWER, MOSFET 6 X 3.73 MM, HALOGEN FREE AND ROHS COMPLIANT, LEADLESS, POWERPAIR, 6 PIN
|
Vishay Siliconix
Vishay Intertechnology, Inc.
|
| 2N7002T |
N-channel TrenchMOS FET - Configuration: Single N-channel ; I<sub>D</sub> DC: 0.3 A; R<sub>DS(on)</sub>: 5000@10V5300@4.5V mOhm; V<sub>DS</sub>max: 60 V 300 mA, 60 V, N-CHANNEL, Si, SMALL SIGNAL, MOSFET, TO-236AB
|
NXP Semiconductors N.V.
|
| SIZ790DT-T1-GE3 |
Dual N-Channel 30 V (D-S) MOSFETs with Schottky Diode
16 A, 30 V, 0.0093 ohm, 2 CHANNEL, N-CHANNEL, Si, POWER, MOSFET 6 X 3.70 MM, HALOGEN FREE AND ROHS COMPLIANT, POWERPAIR, 6 PIN
|
Vishay Siliconix
Vishay Intertechnology, Inc.
|
|
