PART |
Description |
Maker |
MA4ZD03 |
Small-signal device - Diodes - Schottky Barrier Diodes(SBD) Schottky Barrier Diodes (SBD) Silicon epitaxial planar type
|
Panasonic Semiconductor
|
MA745 MA3J745 MA3J745MA745 |
Schottky Barrier Diodes (SBD) Small-signal device - Diodes - Schottky Barrier Diodes(SBD)
|
PANASONIC[Panasonic Semiconductor]
|
MA6Z718 |
Small-signal device - Diodes - Schottky Barrier Diodes(SBD) Schottky Barrier Diodes (SBD)
|
Matsshita / Panasonic
|
HSB88WA |
Schottky Barrier Diodes for Detection and Mixer SILICON SCHOTTKY BARRIER DIODE FOR HIGH SPEED SWITCHING
|
HITACHI[Hitachi Semiconductor]
|
CDBQR0140R-HF12 CDBQR0140R-HF |
Halogen Free Schottky Barrier Diodes, V-RRM=45V, V-R=40V, I-O=0.1A SMD Schottky Barrier Diode
|
Comchip Technology
|
SB0203EJ |
Small Signal Schottky Barrier Diodes Schottky Barrier Diode 30V, 200mA Rectifier
|
Sanyo Semiconductor Sanyo Semicon Device
|
SB1003EJ |
Small Signal Schottky Barrier Diodes SCHOTTKY BARRIER DIODE 30V, 1A RECTIFIER
|
SANYO[Sanyo Semicon Device]
|
1PS70SB14 1PS70SB10_14_15_16_1 1PS70SB16 1PS70SB10 |
Schottky Barrier (Double) Diodes(肖特基势垒(双)二极 From old datasheet system Schottky barrier double diodes
|
PHILIPS[Philips Semiconductors] NXP Semiconductors
|
BAT54CW BAT54SW BAT54AW BAT54W BAT54CWT/R BAT54WSE |
Schottky barrier (double) diodes - Cd max.: 10@VR=1V pF; Configuration: dual c.c. ; IF max: 200 mA; IFSM max: 600 A; IR max: 2@VR=25VA; VFmax: 400@IF=10mA mV; VR max: 30 V Schottky barrier double diodes
|
NXP Semiconductors / Philips Semiconductors PHILIPS[Philips Semiconductors]
|
BAS40-04W BAS40-05W BAS40-06W BAS40W BAS40W_3 |
Schottky barrier double diodes From old datasheet system Schottky barrier (double) diodes
|
NXP Semiconductors PHILIPS[Philips Semiconductors]
|