PART |
Description |
Maker |
STE36N50-DA |
N-CHANNEL ENHANCEMENT MODE POWERMOS TRANSISTORANDULTRA-FAST DIODEINISOTOPPACKAGE N-Channel Enhancement Mode Power MOS Transistor and Ultra-Fast Diode in Isotop Package
|
STMicroelectronics ST Microelectronics
|
STB11NB40 5418 |
N-Channel Enhancement Mode PowerMESHTM MOSFET(N沟道增强模式MOSFET) N沟道增强模式PowerMESHTM MOSFET的(不适用沟道增强模式MOSFET的) N - CHANNEL ENHANCEMENT MODE PowerMESH MOSFET From old datasheet system
|
STMicroelectronics N.V. STMICROELECTRONICS[STMicroelectronics]
|
TN2410L VN2406E |
N-Channel Enhancement-Mode MOSFET(最小漏源击穿电40V,夹断电.18AN沟道增强型MOSFET晶体 N-Channel Enhancement-Mode MOSFET(???婕???荤┛?靛?40V锛?す???娴?.18A??娌??澧?己??OSFET?朵?绠?
|
Vishay Intertechnology,Inc.
|
STB7NB40 5362 |
N-Channel Enhancement Mode PowerMESHTM MOSFET(N沟道增强模式MOSFET) N - CHANNEL ENHANCEMENT MODE PowerMESH MOSFET From old datasheet system
|
意法半导 STMICROELECTRONICS[STMicroelectronics]
|
NDH8320C |
Dual N & P-Channel Enhancement Mode Field Effect Transistor(双N沟道和P沟道增强型场效应N沟道:漏电流3A, 漏源电压20V,导通电.06Ω;P沟道:漏电流-2A, 漏源电压-20V,导通电.13Ω 3000 mA, 20 V, 2 CHANNEL, N AND P-CHANNEL, Si, SMALL SIGNAL, MOSFET Dual N & P-Channel Enhancement Mode Field Effect Transistor
|
Fairchild Semiconductor, Corp. FAIRCHILD[Fairchild Semiconductor]
|
2N6781 2N6782 |
100 V, 06 ohm, N-channel enhancement-mode D-MOS power FET 60 V, 06 ohm, N-channel enhancement-mode D-MOS power FET N-CHANNEL ENHANCEMENT-MODE D-MOS PWER FETS
|
Topaz Semiconductor List of Unclassifed Manufacturers
|
BS250 70209 |
P-Channel Enhancement-Mode MOSFET Transistor(最小漏源击穿电45V,夹断电0.18A的P沟道增强型MOSFET晶体 From old datasheet system P-Ch Enhancement-Mode MOSFET Transistors
|
Vishay Intertechnology,Inc.
|
APM9988COC-TUL APM9988COC-TRL |
Dual N-Channel Enhancement Mode MOSFET 双N沟道增强型MOS Dual N-Channel Enhancement Mode MOSFET 6 A, 20 V, 0.02 ohm, 2 CHANNEL, N-CHANNEL, Si, POWER, MOSFET, MO-153AA
|
Anpec Electronics, Corp.
|
IXTA60N10T IXTP60N10T |
N-Channel Enhancement Mode Avalanche Rated 60 A, 100 V, 0.018 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-263AB N-Channel Enhancement Mode Avalanche Rated
|
IXYS Corporation
|
APT1001RBLC APT1001RSLC APT1001 |
POWER MOS VI 1000V 11A 1.000 Ohm Power MOS VI is a new generation of low gate charge, high voltage N-Channel enhancement mode power MOSFETs Contact Gender:Pin; Circular Shell Style:Wall Mount Receptacle; Insert Arrangement:25-4 RoHS Compliant: No Power MOS VI is a new generation of low gate charge/ high voltage N-Channel enhancement mode power MOSFETs N-CHANNEL ENHANCEMENT MODE HIGH VOLTAGE POWER MOSFETS
|
ADPOW[Advanced Power Technology] Advanced Power Technology Ltd.
|
AP25P15GI14 AP25P15GI |
P-CHANNEL ENHANCEMENT MODE POWER MOSFET N-CHANNEL ENHANCEMENT MODE POWER MOSFET Simple Drive Requirement
|
Advanced Power Electronics Corp.
|