| PART |
Description |
Maker |
| KTA1837 |
General Purpose Transistor
TRIPLE DIFFUSED PNP TRANSISTOR(POWER AMPLIFIER DRIVER STAGE AMPLIFIER)
|
Korea Electronics (KEC)
KEC[KEC(Korea Electronics)]
|
| 2SC2873 E000768 |
TRANSISTOR (POWER AMPLIFIER, SWITCHING APPLICATIONS) 晶体管（功率放大器，开关应用）
TRANSISTOR (POWER AMPLIFIER/ SWITCHING APPLICATIONS)
POWER AMPLIFIER APPLICATIONS POWER SWITCHING APPLICATIONS
From old datasheet system
|
Toshiba, Corp.
Toshiba Semiconductor
|
| CZT3055 CZT3055NPN CZT2955PNP CZT2955 CZT305 |
SMD Bipolar Power Transistor NPN General Purpose Amplifier/Switch
SMD Bipolar Power Transistor PNP General Purpose Amplifier/Switch
2.0W SURFACE MOUNT COMPLEMENTARY SILICON POWER TRANSISTOR
|
CENTRAL[Central Semiconductor Corp]
|
| MPS3391 MPS929 MPS930A MPS3390 MPS3396 MPS3397 MPS |
NPN silicon amplifier transistor. 45 V.
(MPS929 / MPS930A) AMPLIFIER TRANSISTOR
AMPLIFIER TRANSISTOR 放大器晶体管
|
Motorola, Inc
Motorola Mobility Holdings, Inc.
|
| CJD42CPNP CJD41C CJD41CNPN CJD42C |
SMD Bipolar Power Transistor PNP General Purpose Amplifier/Switch
COMPLEMENTARY SILICON POWER TRANSISTOR
|
CENTRAL[Central Semiconductor Corp]
|
| 2SD2386 |
Transistor Silicon NPN Triple Diffused Type (Darlington power transistor) Power Amplifier Applications
|
TOSHIBA
|
| 2SB1557 |
TRANSISTOR SILICON PNP EPITAXIAL TYPE (DARLINGTON POWER TRANSISTOR) POWER AMPLIFIER APPLICATIONS
|
TOSHIBA
|
| 2SC3076 E000787 |
TRANSISTOR (POWER AMPLIFIER, SWITCING APPLICATIONS) 晶体管（功率放大器，SWITCING应用
POWER AMPLIFIER APPLICATIONS POWER SWITCHING APPLICATIONS
From old datasheet system
|
Toshiba, Corp.
Toshiba Corporation
Toshiba Semiconductor
|
| 2SD2480 |
Transistor Silicon NPN Epitaxial Type (Darlington power transistor) Micro Motor Drive, Hammer Drive, Switching and Power Amplifier Applications
|
TOSHIBA
|
| KSA614YTSTU KSA614 KSA614Y KSA614YTU KSA614O KSA61 |
Low Frequency Power Amplifier
PNP Epitaxial Silicon Transistor; Package: TO-220; No of Pins: 3; Container: Bulk 3 A, 55 V, PNP, Si, POWER TRANSISTOR, TO-220AB
|
FAIRCHILD[Fairchild Semiconductor]
Fairchild Semiconductor, Corp.
|
| RFS1006 PRFS-1006-0007 PRFS-1006-0008 PRFS-1006-00 |
3.4-3.6 GHz Power Amplifier 3400 MHz - 3600 MHz RF/MICROWAVE NARROW BAND MEDIUM POWER AMPLIFIER
3.4-3.6 GHz Power Amplifier 3号至三月六日GHz功率放大
Single-band power amplifiers
The RFS1006 power amplifier is a high-power, high-performance GaAs MESFET IC designed for use in a transmit applications in the 3.4-3.6 ...
|
ANADIGICS, Inc.
ANADIGICS[ANADIGICS, Inc]
ANADIGICS[ANADIGICS Inc]
|
| 2SB1015 2SB1015A EA09109 |
TRANSISTOR SILICON PNP TRIPLE DIFFUSED TYPE
TRANSISTOR (AUDIO FREQUENCY POWER AMPLIFIER APPLICATIONS)
From old datasheet system
|
TOSHIBA[Toshiba Semiconductor]
|
