PART |
Description |
Maker |
MA4ZD03 |
Small-signal device - Diodes - Schottky Barrier Diodes(SBD) Schottky Barrier Diodes (SBD) Silicon epitaxial planar type
|
Panasonic Semiconductor
|
MA704WA MA704WK MA3X704D MA3X704E |
Small-signal device - Diodes - Schottky Barrier Diodes(SBD) Schottky Barrier Diodes (SBD)
|
PANASONIC[Panasonic Semiconductor] PANASONIC CORP
|
MA2SE01 |
Schottky Barrier Diodes (SBD) Small-signal device - Diodes - Schottky Barrier Diodes(SBD)
|
Panasonic Semiconductor
|
MA3J745E MA3J745D MA745WA MA745WK |
Small-signal device - Diodes - Schottky Barrier Diodes(SBD) Schottky Barrier Diodes (SBD)
|
Matsshita / Panasonic
|
CDBURT0230R-HF CDBUR0230R-HF |
Halogen Free Schottky Barrier Diodes, V-RRM=35V, V-R=30V, I-O=0.2A Low Profile SMD Schottky Barrier Diode
|
Comchip Technology
|
HSB88WK |
Schottky Barrier Diodes for Detection and Mixer SILICON SCHOTTKY BARRIER DIODE FOR HIGH SPEED SWITCHING
|
HITACHI[Hitachi Semiconductor]
|
SB0203EJ |
Small Signal Schottky Barrier Diodes Schottky Barrier Diode 30V, 200mA Rectifier
|
Sanyo Semiconductor Sanyo Semicon Device
|
HSB226WK |
Schottky Barrier Diodes for Detection and Mixer SILICON SCHOTTKY BARRIER DIODE
|
HITACHI[Hitachi Semiconductor]
|
BAT54CW BAT54SW BAT54AW BAT54W BAT54CWT/R BAT54WSE |
Schottky barrier (double) diodes - Cd max.: 10@VR=1V pF; Configuration: dual c.c. ; IF max: 200 mA; IFSM max: 600 A; IR max: 2@VR=25VA; VFmax: 400@IF=10mA mV; VR max: 30 V Schottky barrier double diodes
|
NXP Semiconductors / Philips Semiconductors PHILIPS[Philips Semiconductors]
|
CDBZ61045-HF CDBZ61045-HF-15 |
Halogen Free Schottky Barrier Diodes, V-RRM=45V, V-R=45V, I-O=10A SMD Schottky Barrier Rectifiers
|
Comchip Technology
|
BAT54A BAT54TA BAT54S BAT54SRS-15 |
SILICON EPITAXIAL SCHOTTKY BARRIER DIODES 0.2 A, 2 ELEMENT, SILICON, SIGNAL DIODE SOT23 SILICON EPITAXIAL SCHOTTKY BARRIER DIODES
|
Diotec Semiconductor AG Diodes Incorporated
|