PART |
Description |
Maker |
U05NU44 |
TOSHIBA SUPER FAST RECOVERY RECTIFIER SILICON DIFFUSED TYPE
|
Toshiba Semiconductor
|
U1DL49 |
TOSHIBA HIGH EFFICIENCY RECTIFIER (HED) SILICON EPITAXIAL JUNCTION TYPE
|
TOSHIBA[Toshiba Semiconductor]
|
CR80-040 CR150-100 CR80-020LEADFREE CENTRALSEMICON |
2.5V to 5.5V, 230µA Dual Rail-to-Rail Voltage Output 10-Bit DAC with Parallel Interface in 24-lead TSSOP 80 A, 400 V, SILICON, RECTIFIER DIODE, DO-5 150 A, 1000 V, SILICON, RECTIFIER DIODE, DO-8 80 A, 200 V, SILICON, RECTIFIER DIODE, DO-5 60 A, 200 V, SILICON, RECTIFIER DIODE, DO-5 60 A, 600 V, SILICON, RECTIFIER DIODE, DO-5 60 A, 800 V, SILICON, RECTIFIER DIODE, DO-5 60 A, 400 V, SILICON, RECTIFIER DIODE, DO-5 60 A, 1200 V, SILICON, RECTIFIER DIODE, DO-5 True Bipolar Input, Dual 12-Bit, 2-Channel, Simultaneous Sampling SAR ADC; Package: TSSOP; No of Pins: 24; Temperature Range: Industrial 80 A, 800 V, SILICON, RECTIFIER DIODE, DO-5
|
Central Semiconductor, Corp. CENTRAL SEMICONDUCTOR CORP
|
1N2282 1N1185A 1N1612 1N3055 1N4510 1N3573R 1N1581 |
35 A, 300 V, SILICON, RECTIFIER DIODE, DO-5 40 A, 150 V, SILICON, RECTIFIER DIODE, DO-5 5 A, 50 V, SILICON, RECTIFIER DIODE, DO-4 0.125 A, SILICON, SIGNAL DIODE 12 A, 1000 V, SILICON, RECTIFIER DIODE, DO-4 3.5 A, 500 V, SILICON, RECTIFIER DIODE, DO-4 3 A, 50 V, SILICON, RECTIFIER DIODE, DO-4 1 A, 400 V, SILICON, SIGNAL DIODE, DO-4 1 A, 200 V, SILICON, SIGNAL DIODE, DO-4 0.8 A, SILICON, SIGNAL DIODE 35 A, 800 V, SILICON, RECTIFIER DIODE, DO-5 275 A, 150 V, SILICON, RECTIFIER DIODE, DO-9
|
|
EFM202L EFM201L EFM203L EFM204L EFM205L EFM206L EF |
2 A, 150 V, SILICON, RECTIFIER DIODE 2 A, 300 V, SILICON, RECTIFIER DIODE SURFACE MOUNT GLASS PASSIVATED SUPER FAST SILICON RECTIFIER VOLTAGE RANGE 50 to 600 Volts CURRENT 2.0 Ampere 2 A, 100 V, SILICON, RECTIFIER DIODE
|
RECTRON LTD Rectron Semiconductor
|
2SK231202 2SK231207 2SK2312 |
TOSHIBA FIELD EFFECT TRANSISTOR SILICON N CHANNEL MOS TYPE (L2-PI-MOSV) CHOPPER Regulator, DC-DC CONVERTER AND MOTOR DRIVE APPLICATIONS TOSHIBA Field Effect Transistor Silicon N Channel MOS Type (L2−?MOSV) TOSHIBA Field Effect Transistor Silicon N Channel MOS Type (L2−ば-MOSV)
|
Toshiba Semiconductor
|
UFT120 UFT12010 UFT12015 UFT12020 UFT12130 UFT1214 |
60 A, 500 V, SILICON, RECTIFIER DIODE 60 A, 700 V, SILICON, RECTIFIER DIODE ULTRA FAST RECOVERY MODULES 60 A, 100 V, SILICON, RECTIFIER DIODE 60 A, 800 V, SILICON, RECTIFIER DIODE
|
MICROSEMI CORP-COLORADO MICROSEMI[Microsemi Corporation] Microsemi, Corp. MICROSEMI CORP-SCOTTSDALE
|
R6200230 R6202250 R6201050 R6201850 R6201040 R6200 |
500 A, 400 V, SILICON, RECTIFIER DIODE General Purpose Rectifier (300-500 Amperes Average 2400 Volts) 通用整流器(300-500安培平均2400伏特 300 A, 2200 V, SILICON, RECTIFIER DIODE HERMETIC SEALED PACKAGE-2 300 A, 1200 V, SILICON, RECTIFIER DIODE 300 A, 200 V, SILICON, RECTIFIER DIODE
|
Powerex Power Semicondu... POWEREX INC Powerex, Inc. POWEREX[Powerex Power Semiconductors] Powerex Power Semiconductor...
|
MR750RL MR751RL MR752RL MR754RL |
6A 50V Silicon Rectifier 6A 100V Silicon Rectifier 6A 200V Silicon Rectifier 6A 400V Silicon Rectifier
|
ON Semiconductor
|
MG1200V1US51 |
TOSHIBA GTR MODULE SILICON N−CHANNEL IGBT TOSHIBA GTR MODULE SILICON N−CHANNEL IGBT TOSHIBA GTR MODULE SILICON N-CHANNEL IGBT
|
Toshiba, Corp. TOSHIBA[Toshiba Semiconductor]
|
TLOE156AP TLYE156AP TLRE156AP TLSE156P |
TOSHIBA T-1 3/4 InGaAIP Ultra Bright LED Toshiba TLxE156 Series LEDs
|
Marktech Optoelectronics MARKTECH[Marktech Corporate]
|
|