| PART |
Description |
Maker |
| GM71C4256B |
262144 word x 4 Bit CMOS DRAM
|
LG
|
| M5M5278DP M5M5278FP M5M5278J M5M5278VP-20V M5M5278 |
262144-BIT (32768-WORD BY 8-BIT) CMOS STATIC RAM
|
MITSUBISHI[Mitsubishi Electric Semiconductor]
|
| M5M5V416BUG-70HI |
4194304-BIT (262144-WORD BY 16-BIT) CMOS STATIC RAM
|
Mitsubishi Electric Corporation
MITSUBISHI[Mitsubishi Electric Semiconductor]
|
| M5M5V416CWG-70HI |
4194304-BIT (262144-WORD BY 16-BIT) CMOS STATIC RAM
|
Mitsubishi Electric Corporation
http://
|
| GM71C4256BJ GM71C4256BJ-70 GM71C4256B GM71C4256BZ- |
262144 word x 4 Bit CMOS DRAM
New Generation Dynamic RAM
|
GoldStar
LG[LG Semicon Co.,Ltd.]
http://
|
| M5M5256DFP-70VLL M5M5256DFP-70VXL M5M5256DFP-85VLL |
262144-BIT (32768-WORD BY 8-BIT) CMOS STATIC RAM 262144位（32768 - Word8位）的CMOS静态RAM
Octal Edge-Triggered D-Type Flip-Flops With 3-State Outputs 20-TSSOP -40 to 85
From old datasheet system
|
Mitsubishi Electric, Corp.
MITSUBISHI[Mitsubishi Electric Semiconductor]
Mitsubishi Electric Corporation
|
| M5M44260CJ M5M44260CJ-5 M5M44260CJ-5S M5M44260CJ-6 |
FAST PAGE MODE 4194304-BIT (262144-WORD BY 16-BIT) DYNAMIC FAST PAGE MODE 4194304-BIT (262144-WORD BY 16-BIT) DYNAMIC RAM
|
Mitsubishi Electric Corporation
MITSUBISHI[Mitsubishi Electric Semiconductor]
|
| M5M4V4265CJ-5 M5M4V4265CJ-5S M5M4V4265CJ-6 M5M4V42 |
EDO (HYPER PAGE) MODE 4194304-BIT (262144-WORD BY 16-BIT) DYNAMIC EDO (HYPER PAGE) MODE 4194304-BIT (262144-WORD BY 16-BIT) DYNAMIC RAM
|
Mitsubishi Electric Corporation
MITSUBISHI[Mitsubishi Electric Semiconductor]
|
| M6MGD137W34DWG |
134,217,728-BIT (8,388,608-WORD BY 16-BIT) CMOS FLASH MEMORY & 33,554,432-BIT (2,097,152-WORD BY 16-BIT) CMOS MOBILE RAM
|
Renesas Electronics Corporation
|
| MSM512800C |
262144-Word X 8-Bit DYNAMIC RAM
|
OKI electronic componets
|
