PART |
Description |
Maker |
SQD300AA100 |
DARLINGTON TRANSISTOR MODULES From old datasheet system
|
SanRex
|
SQD300BA60 |
HIGH BETA DARLINGTON TRANSISTOR MODULES From old datasheet system
|
SanRex
|
SQD300AA120 |
DARLINGTON TRANSISTOR MODULES Transistors Module From old datasheet system
|
SanRex Corporation
|
2N6533 2N6532 2N6530 2N6531 |
8 A N-P-N darlington power transistor. 120 V. 60 W. Gain of 1000 at 3 A. 8 A N-P-N darlington power transistor. 100 V. 60 W. Gain of 1000 at 5 A. 8 A N-P-N darlington power transistor. 100 V. 60 W. Gain of 500 at 3 A. 8 A N-P-N darlington power transistor. 80 V. 60 W. Gain of 1000 at 5 A. 8-AMPERE N-P-N DARLINGTON POWER TRANSISTORS From old datasheet system
|
General Electric Solid State ETC[ETC]
|
2SC4500L 2SC4500S 2SC4500L/S |
SMALL SIGNAL TRANSISTOR TRANSISTOR | BJT | DARLINGTON | NPN | 60V V(BR)CEO | 1A I(C) | TO-251AA 晶体管|晶体管|达林顿|叩| 60V的五(巴西)总裁| 1A条一c)|52AA TRANSISTOR | BJT | DARLINGTON | NPN | 60V V(BR)CEO | 1A I(C) | TO-252AA Silicon NPN Darlington Transistor
|
Hitachi Semiconductor
|
2N999 ST640 ST646 FT359 |
TRANSISTOR | BJT | DARLINGTON | NPN | 60V V(BR)CEO | 500MA I(C) | CAN TRANSISTOR | BJT | DARLINGTON | NPN | 60V V(BR)CEO | 10A I(C) | TO-3 TRANSISTOR | BJT | DARLINGTON | PNP | 80V V(BR)CEO | 10A I(C) | TO-3 晶体管|晶体管|达林顿|进步党| 80V的五(巴西)总裁| 10A条一(c)|3 TRANSISTOR | BJT | DARLINGTON | NPN | 350V V(BR)CEO | 15A I(C) | TO-3
|
STMicroelectronics N.V.
|
CXTA64 CXTA14 |
SMD Small Signal Transistor NPN Darlington SURFACE MOUNT SILICON COMPLEMENTARY DARLINGTON TRANSISTORS SMD Small Signal Transistor PNP Darlington
|
Central Semiconductor Corp.
|
M54583 M54583P M54583PNBSP |
From old datasheet system M54583P Darlington Transistor Array 8 UNIT 400MA DARLINGTON TRANSISTOR ARRAY
|
Mitsubishi Electric Corporation Mitsubishi Electronics America Inc Mitsubishi Electric Semiconductor
|
CZTA77 |
SMD Small Signal Transistor PNP Darlington SURFACE MOUNT PNP SILICON DARLINGTON TRANSISTOR
|
CENTRAL[Central Semiconductor Corp]
|
QM100HA-H QM100HY-H |
MITSUBISHI TRANSISTOR MODULES HIGH POWER SWITCHING USE INSULATED TYPE Integrated Gate Bipolar Transistor (IGBT) Modules: 250V
|
Mitsubishi Electric Corporation MITSUBISHI[Mitsubishi Electric Semiconductor]
|
2SD1630 2SD1630L |
TRANSISTOR | BJT | DARLINGTON | NPN | 70V V(BR)CEO | 1A I(C) | TO-126 晶体管|晶体管|达林顿|叩| 70V的五(巴西)总裁| 1A条一(c)|26 NPN SILICON DARLINGTON POWER TRANSISTOR
|
NEC
|