PART |
Description |
Maker |
BCW72LT1 BCW72LT1/D BCW72L BCW72LT1-D |
General Purpose Transistors NPN Silicon Small Signal NPN General Purpose Transistor NPN Silicon(硅NPN通用晶体
|
ON Semiconductor
|
MPS2222 MPS2222A MPS2222ARLRM MPS2222ARLRP MPS2222 |
Small Signal General Purpose NPN General Purpose Transistors NPN Silicon General Purpose Transistors(NPN Silicon)
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ONSEMI[ON Semiconductor]
|
2SC4617T1G |
NPN Silicon General Purpose Amplifier Transistor NPN GENERAL PURPOSE AMPLIFIER TRANSISTORS SURFACE MOUNT 100 mA, 50 V, NPN, Si, SMALL SIGNAL TRANSISTOR
|
Rectron Semiconductor
|
BC183C |
NPN General Purpose Amplifer NPN General Purpose Amplifier; Package: TO-92; No of Pins: 3; Container: Bulk 100 mA, 30 V, NPN, Si, SMALL SIGNAL TRANSISTOR, TO-92
|
Fairchild Semiconductor, Corp.
|
BC817W BC817-25W BC817-40W BC818W BC817-16W BC818- |
NPN Silicon AF Transistors NPN AF硅晶体管 General Purpose Transistors - NPN Silicon AF Transistor for general AF applications
|
INFINEON[Infineon Technologies AG]
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BCW32LT1 ON0176 BCW32LT1-D |
General Purpose Transistors NPN Silicon From old datasheet system Ooneral Purpose Translstors
|
ON Semiconductor
|
2SC5658M3T5G |
NPN Silicon General Purpose Amplifier Transistor SOT723 General Purpose Transistor
|
VAISH[Vaishali Semiconductor] ON SEMICONDUCTOR
|
2N3904RLRPG 2N3904H 2N390310 |
General Purpose Transistors NPN Silicon 200 mA, 40 V, NPN, Si, SMALL SIGNAL TRANSISTOR, TO-92
|
ON Semiconductor
|
AT-41511 AT-41511-BLK AT-41511-TR1 AT-41533 AT-415 |
General Purpose, Low Noise NPN Silicon Bipolar Transistor 通用型,低噪声NPN硅双极晶体管 General Purpose/ Low Noise NPN Silicon Bipolar Transistor
|
Avago Technologies, Ltd. HP[Agilent(Hewlett-Packard)] Agilent (Hewlett-Packard)
|
U07-17 U07-24 U07-38 U07-19 PSC10-19 PSC10-D-11 PS |
1 ELEMENT, 175000 uH, POWDERED IRON-CORE, GENERAL PURPOSE INDUCTOR 1 ELEMENT, 600000 uH, POWDERED IRON-CORE, GENERAL PURPOSE INDUCTOR 1 ELEMENT, 10000 uH, POWDERED IRON-CORE, GENERAL PURPOSE INDUCTOR 1 ELEMENT, 7200000 uH, POWDERED IRON-CORE, GENERAL PURPOSE INDUCTOR 1 ELEMENT, 240000 uH, POWDERED IRON-CORE, GENERAL PURPOSE INDUCTOR 1 ELEMENT, 120000 uH, POWDERED IRON-CORE, GENERAL PURPOSE INDUCTOR 1 ELEMENT, 430000 uH, POWDERED IRON-CORE, GENERAL PURPOSE INDUCTOR 1 ELEMENT, 50000 uH, POWDERED IRON-CORE, GENERAL PURPOSE INDUCTOR 1 ELEMENT, 5000 uH, POWDERED IRON-CORE, GENERAL PURPOSE INDUCTOR 1 ELEMENT, 5000000 uH, POWDERED IRON-CORE, GENERAL PURPOSE INDUCTOR 1 ELEMENT, 72000 uH, POWDERED IRON-CORE, GENERAL PURPOSE INDUCTOR 1 ELEMENT, 1500000 uH, POWDERED IRON-CORE, GENERAL PURPOSE INDUCTOR 1 ELEMENT, 7200 uH, POWDERED IRON-CORE, GENERAL PURPOSE INDUCTOR 1 ELEMENT, 36000 uH, POWDERED IRON-CORE, GENERAL PURPOSE INDUCTOR 1 ELEMENT, 1200000 uH, POWDERED IRON-CORE, GENERAL PURPOSE INDUCTOR 1 ELEMENT, 6000000 uH, POWDERED IRON-CORE, GENERAL PURPOSE INDUCTOR 1 ELEMENT, 1000000 uH, POWDERED IRON-CORE, GENERAL PURPOSE INDUCTOR 1 ELEMENT, 17500 uH, POWDERED IRON-CORE, GENERAL PURPOSE INDUCTOR 1 ELEMENT, 360000 uH, POWDERED IRON-CORE, GENERAL PURPOSE INDUCTOR 1 ELEMENT, 86000 uH, POWDERED IRON-CORE, GENERAL PURPOSE INDUCTOR
|
|
BCW60A |
NPN General Purpose Transistors NPN epitaxial silicon transistor. Collector-base voltage VCBO 32 V
|
TY Semicondutor TY Semiconductor Co., Ltd
|
CIL351 CIL352 |
0.300W General Purpose NPN Metal Can Transistor. 70V Vceo, 0.200A Ic, 200 - 480 hFE. 0.300W General Purpose NPN Metal Can Transistor. 70V Vceo, 0.200A Ic, 100 - 250 hFE. NPN SILICON PLANAR TRANSISTORS
|
Continental Device India Limited
|
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