PART |
Description |
Maker |
GS71216TP |
64K x 16 1Mb Asynchronous SRAM 64K的16异步SRAM
|
GSI Technology, Inc.
|
N01L63W2A |
1Mb Ultra-Low Power Asynchronous CMOS SRAM 64K x 16 bit
|
ON Semiconductor
|
M27C800-100B1TR M27C800-100B6TR M27C800-100F1TR M2 |
8 Mbit 1Mb x8 or 512Kb x16 UV EPROM and OTP EPROM 64K (8K x 8) UV EPROM and OTP ROM
|
意法半导 STMicroelectronics ST Microelectronics
|
GS81032AT-150I GS81032AT-138I GS81032AT-133I GS810 |
18ns 66MHz 32K x 32 1Mb synchronous burst SRAM 12ns 100MHz 32K x 32 1Mb synchronous burst SRAM 10ns 133MHz 32K x 32 1Mb synchronous burst SRAM 9.7ns 138MHz 32K x 32 1Mb synchronous burst SRAM 11ns 117MHz 32K x 32 1Mb synchronous burst SRAM 9ns 150MHz 32K x 32 1Mb synchronous burst SRAM 32K x 32 1M Synchronous Burst SRAM 32K X 32 CACHE SRAM, 9.7 ns, PQFP100 32K x 32 1M Synchronous Burst SRAM 32K X 32 CACHE SRAM, 18 ns, PQFP100 32K x 32 1M Synchronous Burst SRAM 32K X 32 CACHE SRAM, 10 ns, PQFP100 32K x 32 1M Synchronous Burst SRAM
|
GSI Technology, Inc.
|
CY7C1332 CY7C1331 7C1331 |
64K x 18 Synchronous Cache 3.3V RAM(3.3V 64K x 18 同步高速缓冲存储器 RAM) 64K的18同步高速缓.3V的内存电压(3.3V 64K的18同步高速缓冲存储器的RAM From old datasheet system 64K x 18 SynchronousCache 3.3V RAM
|
Cypress Semiconductor Corp.
|
AS7C3364FT36B-80TQIN AS7C3364FT32B AS7C3364FT32B-1 |
From old datasheet system Shielding Gasket; Gasket Style:D-Shaped; Body Material:Beryllium Copper alloy #C17200; Height:.11"; Length:16"; Mounting Type:Adhesive; Thickness:.0027"; Width:.28" 64K X 32 STANDARD SRAM, 10 ns, PQFP100 3.3V 64K x 32/36 Flow Through Synchronous SRAM 64K X 32 STANDARD SRAM, 6.5 ns, PQFP100 3.3V 64K x 32/36 Flow Through Synchronous SRAM 64K X 36 STANDARD SRAM, 7.5 ns, PQFP100
|
Alliance Semiconductor ... ALSC[Alliance Semiconductor Corporation] Alliance Semiconductor, Corp.
|
CY62126V CY62126VLL-55BAC CY62126VLL-70BAI CY62126 |
64K X 16 STANDARD SRAM, 70 ns, PDSO44 64K X 16 STANDARD SRAM, 55 ns, PDSO44 64K X 16 STANDARD SRAM, 70 ns, PBGA48 64K X 16 STANDARD SRAM, 55 ns, PBGA48 From old datasheet system 64K x 16 Static RAM
|
CYPRESS SEMICONDUCTOR CORP
|
IBM041813PPLB |
64K X 18 BURST PIPELINE SRAM(1M (64K X 18)同步可猝发流水线式线式高性能静态RAM) 64K的X管道18的SRAM00万(64K的X 18)同步可猝发流水线式线式高性能静态内存)
|
International Business Machines, Corp.
|
MX27L512PC-15 MX27L512TI-20 MX27L512TI-12 MX27L512 |
512K-BIT [64K x 8] CMOS EPROM 64K X 8 OTPROM, 120 ns, PDIP28
|
Macronix International Co., Ltd.
|
W29N102C |
64K×16bit CMOS 3.3V Flash Memory(64K×16位以3.3V电源供电的CMOS闪速存储器)
|
Winbond Electronics Corp
|
CY7C192-25PC |
64K x 4 Static RAM with Separate I/O 64K X 4 STANDARD SRAM, 25 ns, PDIP28
|
Cypress Semiconductor, Corp.
|