PART |
Description |
Maker |
A67P9318E-4.2F A67P8336 A67P8336E A67P8336E-2.6 A6 |
DIODE ZENER SINGLE 500mW 5.6Vz 20mA-Izt 0.05 5uA-Ir 3Vr DO35-GLASS 5K/AMMO 512K X 18, 256K X 36 LVTTL, Pipelined ZeBL SRAM 12k × 1856 × 36 LVTTL,流水线ZeBL的SRAM GIGABASE 350 CAT5E PATCH 5 FT, SNAGLESS, WHITE 12k × 1856 × 36 LVTTL,流水线ZeBL的SRAM 512K X 18, 256K X 36 LVTTL, Pipelined ZeBL SRAM 512k × 1856 × 36 LVTTL,流水线ZeBL的SRAM 512K X 18, 256K X 36 LVTTL, Pipelined ZeBL SRAM 12k × 18256 × 36 LVTTL,流水线ZeBL的SRAM
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AMICC[AMIC Technology] AMIC Technology Corporation AMIC Technology, Corp.
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A67L16181E-7.5 A67L06361E A67L06361E-6.5 A67L06361 |
2M X 18, 1M X 36 LVTTL, Flow-through ZeBL SRAM 2米x 1800万米6 LVTTL,流通过ZeBL的SRAM 2M X 18, 1M X 36 LVTTL, Flow-through ZeBL SRAM 2米x 1800万米36 LVTTL,流通过ZeBL的SRAM CAT 6 BLADE SERVER PATCH CABLE 15 WHT
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AMIC Technology, Corp. AMIC Technology Corporation AMICC[AMIC Technology]
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CY7C1371D-100AXI CY7C1371D-100BGI CY7C1373D-100BZI |
18-Mbit (512K x 36/1M x 18) Flow-Through SRAM with NoBLTM Architecture 1M X 18 ZBT SRAM, 8.5 ns, PQFP100 18-Mbit (512K x 36/1M x 18) Flow-Through SRAM with NoBLTM Architecture 18兆位(为512k × 36/1M × 18)流体系结构,通过与NoBLTM的SRAM 18-Mbit (512K x 36/1M x 18) Flow-Through SRAM with NoBLTM Architecture 1M X 18 ZBT SRAM, 8.5 ns, PBGA165 18-Mbit (512K x 36/1M x 18) Flow-Through SRAM with NoBLTM Architecture 1M X 18 ZBT SRAM, 6.5 ns, PBGA119 18-Mbit (512K x 36/1M x 18) Flow-Through SRAM with NoBLTM Architecture 512K X 36 ZBT SRAM, 8.5 ns, PBGA165 18-Mbit (512K x 36/1M x 18) Flow-Through SRAM with NoBLTM Architecture 1M X 18 ZBT SRAM, 6.5 ns, PQFP100 18-Mbit (512K x 36/1M x 18) Flow-Through SRAM with NoBLTM Architecture 1M X 18 ZBT SRAM, 6.5 ns, PBGA165 18-Mbit (512K x 36/1M x 18) Flow-Through SRAM with NoBLTM Architecture 512K X 36 ZBT SRAM, 8.5 ns, PBGA119
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Cypress Semiconductor Corp. Cypress Semiconductor, Corp.
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AS7C33512FT32_36A AS7C33512FT32_36A.V1.4 AS7C33512 |
3.3V 512K x 32/36 Flow-through synchronous SRAM 512K X 36 STANDARD SRAM, 10 ns, PQFP100 3.3V 512K x 32/36 Flow-through synchronous SRAM 512K X 32 STANDARD SRAM, 8.5 ns, PQFP100 3.3V 512K x 32/36 Flow-through synchronous SRAM 512K X 36 STANDARD SRAM, 7.5 ns, PQFP100 DIODE ZENER SINGLE 1000mW 39Vz 6.5mA-Izt 0.05 5uA-Ir 29.7Vr DO41-GLASS 5K/AMMO DIODE ZENER SINGLE 1000mW 27Vz 9.5mA-Izt 0.05 5uA-Ir 20.6Vr DO41-GLASS 5K/AMMO From old datasheet system Sync SRAM - 3.3V
|
Alliance Semiconductor, Corp. ALSC[Alliance Semiconductor Corporation]
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GS882Z18AB-250 GS882Z18AB-133 GS882Z18AD-133 GS882 |
250MHz 5.5ns 512K x 18 9Mb pipelined and flow through synchronous NBT SRAM 133MHz 8.5ns 512K x 18 9Mb pipelined and flow through synchronous NBT SRAM 166MHz 7ns 512K x 18 9Mb pipelined and flow through synchronous NBT SRAM 200MHz 6.5ns 512K x 18 9Mb pipelined and flow through synchronous NBT SRAM 200MHz 6.5s 512K x 18 9Mb pipelined and flow through synchronous NBT SRAM
|
GSI Technology
|
A67L93361 A67L93361E-8.5F A67L06181 A67L06181E A67 |
1M X 18, 512K X 36 LVTTL, Flow-through ZeBL SRAM 100万X 18,为512k × 36 LVTTL,流通过ZeBL的SRAM Hook-Up Wire; Conductor Size AWG:18; Approval Categories:J-W-1177/14; MW 35C (Heavy); Jacket Material:Polyester; Leaded Process Compatible:Yes; Number of Conductors:1; Voltage Nom.:600V RoHS Compliant: Yes Hook-Up Wire; Conductor Size AWG:20; No. Strands x Strand Size:Solid; Approval Categories:J-W-1177/14; MW 35C (Heavy); Jacket Material:Polythermaleze; Leaded Process Compatible:Yes; Number of Conductors:1; Voltage Nom.:600V RoHS Compliant: Yes (A67L06181 / A67L93361) Flow-through ZeBL SRAM
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AMIC Technology, Corp. AMIC Technology Corporation AMICC[AMIC Technology]
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KM416S1120DT-G/F7 KM416S1120DT-G/F6 KM416S1120DT-G |
1M X 16 SYNCHRONOUS DRAM, 5.5 ns, PDSO50 512K x 16bit x 2 Banks Synchronous DRAM LVTTL 12k × 16位2银行同步DRAM LVTTL
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Samsung semiconductor List of Unclassifed Manufacturers Electronic Theatre Controls, Inc.
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IDT71T75902 71T75702_DS_59004 IDT71T75902S80PF IDT |
2.5V 1M x 18 ZBT Synchronous 2.5V I/O Flow-through SRAM From old datasheet system 512K x 36, 1M x 18 2.5V Synchronous ZBT? SRAMs 2.5V I/O, Burst Counter Flow-Through Outputs
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IDT
|
IS61NVF51218A-6.5TQI IS61NLF51218A-6.5B3 IS61NLF51 |
256K x 36 and 512K x 18 9Mb, FLOW THROUGH (NO WAIT) STATE BUS SRAM 512K X 18 ZBT SRAM, 6.5 ns, PQFP100 256K x 36 and 512K x 18 9Mb, FLOW THROUGH (NO WAIT) STATE BUS SRAM 512K X 18 ZBT SRAM, 6.5 ns, PBGA165 256K x 36 and 512K x 18 9Mb, FLOW THROUGH (NO WAIT) STATE BUS SRAM 512K X 18 ZBT SRAM, 6.5 ns, PBGA119 256K x 36 and 512K x 18 9Mb, FLOW THROUGH (NO WAIT) STATE BUS SRAM 256K X 36 ZBT SRAM, 6.5 ns, PBGA165 256K x 36 and 512K x 18 9Mb, FLOW THROUGH (NO WAIT) STATE BUS SRAM 256K X 36 ZBT SRAM, 7.5 ns, PQFP100 256K x 36 and 512K x 18 9Mb, FLOW THROUGH (NO WAIT) STATE BUS SRAM 512K X 18 ZBT SRAM, 7.5 ns, PQFP100
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Integrated Silicon Solution, Inc. INTEGRATED SILICON SOLUTION INC
|
CY7C1383D-133BZXC CY7C1381D CY7C1381D-100AXC CY7C1 |
18-Mbit (512K x 36/1M x 18) Flow-Through SRAM
|
CYPRESS[Cypress Semiconductor]
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CY7C1447AV25-133BGXI CY7C1447AV25-133BGI CY7C1447A |
36-Mbit (1M x 36/2M x 18/512K x 72) Flow-Through SRAM
|
Cypress Semiconductor
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