| PART |
Description |
Maker |
| HN27C101AG |
131072-word 8-bit CMOS UV Erasable and Programmable ROM
|
Hitachi Semiconductor
|
| M5L2764K M5L2764K-2 |
65536 Bit Erasable and Electrically Reprogrammable ROM
65536-BIT (8192-WORD BY 8-BIT) ERASABLE AND ELECTRICALLT REPROGRAMMABLE ROM
|
Mitsubishi Electric Semiconductor
|
| M5M27C202FP-12 M5M27C202FP-15 M5M27C202J-12 M5M27C |
MB 41C 27#20 14#16 SKT RECP
2097152-BIT(131072-WORD BY 16-BIT) CMOS ONE TIME REPROGRAMMABLE ROM
|
MITSUBISHI[Mitsubishi Electric Semiconductor]
Mitsubishi Electric Corporation
|
| M5M5V108CFP-10H M5M5V108CFP-10X M5M5V108CFP-70H M5 |
From old datasheet system
1048576-BIT(131072-WORD BY 8-BIT)CMOS STATIC RAM 1048576位（131072 - Word位）的CMOS静态RAM
|
MITSUBISHI[Mitsubishi Electric Semiconductor]
Mitsubishi Electric Corporation
Mitsubishi Electric, Corp.
|
| 28C256ASC-1 28C256ASC-2 28C256ASC-3 28C256ASC-4 28 |
High speed 120 ns CMOS 256 K electrically erasable programmable ROM 32K x 8 BIT EEPROM
High speed 150 ns CMOS 256 K electrically erasable programmable ROM 32K x 8 BIT EEPROM
High speed 200 ns CMOS 256 K electrically erasable programmable ROM 32K x 8 BIT EEPROM
High speed 250 ns CMOS 256 K electrically erasable programmable ROM 32K x 8 BIT EEPROM
High speed CMOS. 256K electrically erasable programmable ROM. 32K x 8 bit EEPROM. Access time 250 ns.
High speed CMOS. 256K electrically erasable programmable ROM. 32K x 8 bit EEPROM. Access time 120 ns.
High speed CMOS. 256K electrically erasable programmable ROM. 32K x 8 bit EEPROM. Access time 150 ns.
High speed CMOS. 256K electrically erasable programmable ROM. 32K x 8 bit EEPROM. Access time 200 ns.
|
Turbo IC
|
| MB8518H |
UV Erasable 8192-Bit ROM
|
Fujitsu
|
| HN27C1024HCC |
65536-word x 16-bit CMOS UV Erasable and Programmable ROM
|
Renesas Technology / Hitachi Semiconductor
|
| UPD458 |
Fully Decoded 8192-Bit Electrically Erasable and Programmable ROM
|
NEC Electronics
|
| CXK5B81020J CXK5B81020J-12 CXK5B81020TM CXK5B81020 |
131072-word ′ 8-bit High Speed Bi-CMOS Static RAM
131072-word ? 8-bit High Speed Bi-CMOS Static RAM
131072-word 8-bit High Speed Bi-CMOS Static RAM
131072-word 8-bit High Speed Bi-CMOS Static RAM 131072字?8位高速双CMOS静态RAM
128 x 64 pixel format, LED Backlight available 131072字?8位高速双CMOS静态RAM
|
SONY[Sony Corporation]
Sony, Corp.
|
| LC66356B LC662312A LC662316A LC66P2516 LC66516B LC |
Four-Bit Single-Chip Microcontrollers with 4, 6, and 8 KB of On-Chip ROM 四位单片机与4,6微控制器 KB的片上ROM
Four-Bit Single-Chip Microcontrollers with 4/ 6/ 8/ 12/ and 16 KB of On-Chip ROM
4-Bit Microcontroller
Microcontroller 微控制器
Four-Bit Single-Chip Microcontrollers with 4/6/and 8
Four-Bit Single-Chip Microcontrollers with 8 12 and 16 KB of On-Chip ROM
Four-Bit Single-Chip Microcontrollers with 4 6 8 12 and 16 KB of On-Chip ROM
Four-Bit Single-Chip Microcontrollers with 4, 6, 8, 12, and 16 KB of On-Chip ROM
Four-Bit Single-Chip Microcontrollers with 4 6 and 8 KB of On-Chip ROM
Four-Bit Single-Chip Microcontroller with 16 KB of On-Chip EPROM
Four-Bit Single-Chip Microcontroller with 16 KB of On-Chip OTP PROM
12 and 16-kbyte on-chip ROM capacities CMOS 4-bit single-chip microcontrollers
|
Sanyo Electric Co., Ltd.
Eutech Microelectronics, Inc.
SANYO[Sanyo Semicon Device]
http://
|
