| PART |
Description |
Maker |
| P1707A-08TT P1707A P1707A-08SR P1707A-08ST P1707A- |
Notebook LCD Panel EMI Reduction IC 1707 SERIES, PLL BASED CLOCK DRIVER, 1 TRUE OUTPUT(S), 0 INVERTED OUTPUT(S), PDSO8
Wide Input Frequency Range Devices
From old datasheet system
|
Alliance Semiconductor, Corp.
ALSC[Alliance Semiconductor Corporation]
|
| TDA8350Q TDA8350Q/N6 |
TDA8350Q; DC-coupled vertical deflection and East-West output circuit
From old datasheet system
|
Philips
|
| STV9306A |
Bus-Controlled Vertical Deflection System with East/West Correction Output Circuit
|
STMICROELECTRONICS[STMicroelectronics]
|
| STV9306B |
Bus-Controlled Vertical Deflection System with East/West Correction Output Circuit
|
STMICROELECTRONICS[STMicroelectronics]
|
| AN5521 |
TV Vertical Deflection Output IC
VERTICAL PROCESSOR/DEFLECTOR,BIPOLAR,SIP,7PIN,PLASTIC
|
PANASONIC[Panasonic Semiconductor]
Matsushita, Panasonic
|
| LA78045 LA7804506 |
TV and CRT Display Vertical Output IC with Bus Control Support
VERTICAL DEFLECTION IC, ZFM7
|
Sanyo Semicon Device
SANYO SEMICONDUCTOR CO LTD
|
| MAX8671X MAX8671XETL |
PMIC with Integrated Charger and Smart Power Selector for Handheld Devices
Five Regulated Output Voltages and Li Charger with Smart Power Control that Allows a System to Oper
|
Maxim Integrated Products
|
| W4NRD0X-0000 W4NRD8C-U000 W4NXD8C-0000 W4NXD8C-L00 |
Diameter: 50.8mm; LCW substrates; silicon carbide substrates. For high frequency power devices, high power devices, high temperature devices, optoelectronic devices, III-V nitride deposition
Diameter: 50.8mm; ultra-low mircopipe density; silicon carbide substrates. For high frequency power devices, high power devices, high temperature devices, optoelectronic devices, III-V nitride deposition
Diameter: 50.8mm; standatd mircopipe density; silicon carbide substrates. For high frequency power devices, high power devices, high temperature devices, optoelectronic devices, III-V nitride deposition
Diameter: 50.8mm; low mircopipe density; silicon carbide substrates. For high frequency power devices, high power devices, high temperature devices, optoelectronic devices, III-V nitride deposition
Diameter: 50.8mm; select mircopipe density; silicon carbide substrates. For high frequency power devices, high power devices, high temperature devices, optoelectronic devices, III-V nitride deposition
Diameter: 76.2mm; LCW type; 6H-silicon carbide. For high frequency power devices, high power devices, high temperature devices, optoelectronic devices, III-V nitride deposition
Diameter: 50.8mm; LCW type; 6H-silicon carbide. For high frequency power devices, high power devices, high temperature devices, optoelectronic devices, III-V nitride deposition
Diameter: 50.8mm; lsemi-insulating (prototype); 6H-silicon carbide. For high frequency power devices, high power devices, high temperature devices, optoelectronic devices, III-V nitride deposition
|
CREE POWER
|
| EPC1064 EPC1064V EPC1 EPC1213 EPC1441 EP20K200C EP |
CONFIGURATION DEVICES FOR SRAM-BASED LUT DEVICES
|
Altera Corporation
ETC
|
| EPC4 EPC8 |
Configuration Devices for SRAM-Based LUT Devices
|
Altera Corporation
|
| LR4-380XF LR4-600XF VTP210SL19.2_5.8 MINISMDE190F- |
PolySwitch Resettable Devices Strap Battery Devices
|
Tyco Electronics
|
