| PART |
Description |
Maker |
| MTB10N60E7 ON2391 MTB10N60E7-D MTB10N60E7T4 |
TMOS 7 E-FET High Energy Power FET N-Channel Enhancement-Mode Silicon Gate
TMOS 7 E-FET™ High Energy Power FET
From old datasheet system
TMOS POWER FET 10 AMPERES 600 VOLTS
|
ON Semiconductor
|
| ADE7768AR-REF ADE7768ARZ-RL ADE7768AR-RL |
Energy Metering IC with Integrated Oscillator and Positive Power Accumulation 电能计量IC整合的振荡器和积累的积极力量
Energy Metering IC with Integrated Oscillator and Positive Power Accumulation 2-CHANNEL POWER SUPPLY SUPPORT CKT, PDSO16
|
Analog Devices, Inc.
|
| IRFF9132 IRFF9130 |
Avalanche-Energy-Rated P-Channel Power MOSFETs
|
New Jersey Semi-Conduct...
|
| MTB6N60E1_D MTB6N60E1 ON2447 MTB6N60 MTB6N60E1-D |
TMOS POWER FET 6.0 AMPERES 600 VOLTS 6 A, 600 V, 1.2 ohm, N-CHANNEL, Si, POWER, MOSFET
From old datasheet system
TMOS E-FET High Energy Power FET D2PAK-SL Straight Lead N-Channel Enhancement-Mode Silicon Gate
|
Motorola Mobility Holdings, Inc.
MOTOROLA[Motorola, Inc]
ON Semiconductor
|
| PHD2N60E PHP2N60E PHB2N60E |
PowerMOS transistors Avalanche energy rated 1.9 A, 600 V, 6 ohm, N-CHANNEL, Si, POWER, MOSFET
|
NXP Semiconductors N.V.
PHILIPS[Philips Semiconductors]
|
| MTH8N50E |
TMOS E-FET High Energy Power FET N-Channel Enhancement-Mode Silicon Gate
|
MOTOROLA[Motorola, Inc]
|
| EM24DIN |
Energy Management Energy Analyzer Type EM24 DIN
|
List of Unclassifed Manufacturers
|
| CS54610408 CS5461 |
Single-Phase, Bidirectional Power/Energy IC
Single Phase Bi-Directional Power/Energy IC
|
Cirrus Logic
|
| MTB10N40E MTB10N40E-D |
TMOS E-FET High Energy Power FET D2PAK for Surface Mount N-Channel Enhancement-Mode Silicon Gate
TMOS POWER FET 10 AMPERES
|
ON Semiconductor
MOTOROLA[Motorola, Inc]
|
| MTB3N100E_D ON2419 MTB3N100E 3N100E MTB3N100E-D |
From old datasheet system
TMOS POWER FET 3.0 AMPERES 1000 VOLTS
TMOS E-FET High Energy Power FET D2PAK for Surface Mount N-Channel Enhancement-Mode Silicon Gate
|
Motorola, Inc.
MOTOROLA[Motorola, Inc]
ON Semiconductor
|
