| PART |
Description |
Maker |
| UG42W6414GSG UG42W6446GSG UG42W6416GSG |
16M BYTES (2M X 64 BITS) EDO MODE UNBUFFERED SODIMM
|
List of Unclassifed Manufacturers
http://
ETC[ETC]
|
| HM5116405LS-5 HM5116405LS-6 HM5116405LS-7 HM511640 |
16M EDO DRAM (4-Mword x 4-bit), 50ns
16M EDO DRAM (4-Mword x 4-bit), 60ns
16M EDO DRAM (4-Mword x 4-bit), 70ns
|
Elpida Memory
|
| EDD2516AKTA-6B-E EDD2516AKTA-7B-E EDD2516AKTA-7A-E |
256M bits DDR SDRAM (16M words x 16 bits)
|
Elpida Memory, Inc.
ELPIDA MEMORY INC
|
| TC58FVM7T2 TC58FVM7T2AFT65 |
128-MBIT (16M X 8 BITS / 8M X 16 BITS) CMOS FLASH MEMORY 128兆位,600 x 8 8米16位）的CMOS闪存
|
Toshiba Semiconductor
Toshiba, Corp.
|
| HM5164405FTT-5 HM5165405FTT-5 HM5164405FTT-6 HM516 |
16M x 4-bit EDO DRAM, 50ns
16M x 4-bit EDO DRAM, 60ns
|
Hitachi Semiconductor
|
| TC5165405BFTS-40 |
16M X 4 EDO DRAM, 40 ns, PDSO32
|
|
| AS4C1M16E5 |
5V / 3.3V Edo DRAM, 16M, 1Mx16
|
ALLIANCE
|
| HYB3164405L-60 HYB3164405L-50 HYB3164405T-60 HYB31 |
16M x 4-Bit Dynamic RAM (4k & 8k Refresh, EDO-version)
|
SIEMENS[Siemens Semiconductor Group]
Infineon
|
| TC58128AFT |
128-MBIT (16M × 8 BITS) CMOS NAND E2PROM
|
Toshiba Semiconductor
|
| EDE2508ABSE-5C-E EDE2516ABSE-5C-E EDE2516ABSE-6E-E |
256M bits DDR2 SDRAM 16M X 16 DDR DRAM, 0.45 ns, PBGA84
|
Elpida Memory, Inc.
ELPIDA MEMORY INC
|
| LC321667BJ LC321667BM LC321667BT-70 LC321667BT-80 |
1 MEG (65536 words X 16 bits) DRAM EDO Page Mode / Byte Write
1 MEG (65536 words X 16 bits) DRAM EDO Page Mode, Byte Write???
|
Sanyo Electric Co.,Ltd.
Sanyo Semicon Device
|
| HB56SW3272ESK HB56SW3272ESK-6 HB56SW3272ESK-5 |
256MB Buffered EDO DRAM DIMM 32-Mword x 72-bit/ 4k Refresh/ 2 Bank Module(36 pcs of 16M x 4 components)
256MB Buffered EDO DRAM DIMM 32-Mword x 72-bit, 4k Refresh, 2 Bank Module(36 pcs of 16M x 4 components)
|
Hitachi Semiconductor
Hitachi,Ltd.
|
