PART |
Description |
Maker |
MB111XXX |
Bipolar Gate Array
|
Fujitsu
|
MGW21N60ED-D |
Insulated Gate Bipolar Transistor N-Channel Enhancement-Mode Silicon Gate
|
ON Semiconductor
|
MGW20N120-D |
Insulated Gate Bipolar Transistor N-Channel Enhancement-Mode Silicon Gate
|
ON Semiconductor
|
MGP20N60U-D |
Insulated Gate Bipolar Transistor N-Channel Enhancement-Mode Silicon Gate
|
ON Semiconductor
|
MGP21N60E-D |
Insulated Gate Bipolar Transistor N-Channel Enhancement-Mode Silicon Gate
|
ON Semiconductor
|
MGS13002DD MGS13002D |
Insulated Gate Bipolar Transistor N-Channel Enhancement-Mode Silicon Gate
|
MOTOROLA[Motorola, Inc]
|
MMG05N60D_D ON2233 MMG05N60D |
Insulated Gate Bipolar Transistor From old datasheet system N-hannel Enhancement-ode Silicon Gate
|
ONSEMI[ON Semiconductor]
|
CT30SM-12 CT30SM-1 |
MITSUBISHI INSULATED GATE BIPOLAR TRANSISTOR GENERAL INVERTER UPS USE Integrated Gate Bipolar Transistor (IGBT) Modules: 250V GENERAL INVERTER . UPS USE
|
Mitsubishi Electric Corporation MITSUBISHI[Mitsubishi Electric Semiconductor]
|
MGW12N120 |
Insulated Gate Bipolar Transistor N-Channel Insulated Gate Bipolar Transistor 20 A, 1200 V, N-CHANNEL IGBT, TO-247AE
|
ONSEMI[ON Semiconductor]
|
EPF10K30EFC484-3DX EPF10K100BQC208-3DX EPF10K100BQ |
ASIC 专用集成电路 Field Programmable Gate Array (FPGA) 现场可编程门阵列(FPGA Field Programmable Gate Array (FPGA) 现场可编程门阵列FPGA
|
TE Connectivity, Ltd. DOMINANT Opto Technologies Sdn. Bhd. Altera, Corp. Vectron International, Inc. Cypress Semiconductor Corp. PATLITE, Corp.
|