| PART |
Description |
Maker |
| FF1N30HS60DD |
30A, 600V Stealth Diode 30 A, 600 V, SILICON, RECTIFIER DIODE
33A, 600V Stealth Diode
|
Fairchild Semiconductor, Corp.
FAIRCHILD[Fairchild Semiconductor]
|
| ISL9R860P2 ISL9R860S3ST ISL9R860S2 ISL9R860S3S ISL |
8A, 600V Stealth Single Diode
8A, 600V Stealth Diode
8A, 600V Stealth⑩ Diode
8A, 600V StealthDiode
|
FAIRCHILD[Fairchild Semiconductor]
Fairchild Semiconductor Corporation
|
| FGB20N6S2D FGH20N6S2D FGB20N6S2DT FGP20N6S2D |
600V, SMPS II Series N-Channel IGBT with Anti-Parallel Stealth Diode
Switch Mode Power Supply; Output Power:300W; No. of Outputs:1; Output 1 VDC :5VDC; Output Current 1:60A; Power Supply Mounting:Chassis; Output Current:60A; Output Power Max:300W; Output Voltage:5VDC; Series:JWS RoHS Compliant: Yes
600V, SMPS II Series N-Channel IGBT with Anti-Parallel StealthTM Diode
600V/ SMPS II Series N-Channel IGBT with Anti-Parallel StealthTM Diode
600V, SMPS II Series N-Channel IGBT with Stealth Diode, TO-263/D2PAK Package
600V, SMPS II Series N-Channel IGBT with Anti-Parallel Stealth TM Diode
|
Fairchild Semiconductor Corporation
FAIRCHILD[Fairchild Semiconductor]
|
| FFP08S60SN FFP08S60SNTU |
8A, 600V STEALTH II Rectifier; Package: TT220; No of Pins: 2; Container: Rail 8 A, 600 V, SILICON, RECTIFIER DIODE, TO-220AC
8A, 600V STEALTHTM II Rectifier
|
Fairchild Semiconductor, Corp.
|
| ISL9R2480G2 |
24A/ 800V Stealth Diode
24A, 800V Stealth⑩ Diode
24A, 800V Stealth?/a> Diode
|
FAIRCHILD[Fairchild Semiconductor]
|
| ISL9R18120S3S ISL9R18120G2 ISL9R18120P2 ISL9R18120 |
18A, 1200V STEALTH DIODE, TO263/D2PAK PACKAGE
18A, 1200V Stealth⑩ Diode
|
FAIRCHILD[Fairchild Semiconductor]
|
| RURD660S9A RURD660 RURD660S RURD660S9ANL |
6A/ 600V Ultrafast Diodes
6A, 600V UltraFast Diode 6 A, 600 V, SILICON, RECTIFIER DIODE, TO-252
6A, 600V Ultrafast Diodes
|
Fairchild Semiconductor, Corp.
Fairchild Semiconductor Corporation
FAIRCHILD[Fairchild Semiconductor]
|
| IRG4BC20MDS IRG4BC20MD-S IRG4BC20MD-STRR IRG4BC20M |
600V Fast 1-8 kHz Copack IGBT in a D2-Pak package
INSULATED GATE BIPOLAR TRANSISTOR WITH ULTRAFAST SOFT RECOVERY DIODE(Vces=600V, Vce(on)typ.=1.85V, @Vge=15V, Ic=11A)
TRANSISTOR | IGBT | N-CHAN | 600V V(BR)CES | 11A I(C) | TO-263AB
|
IRF[International Rectifier]
|
| 15ETX06S 15ETX06 15ETX06-1 15ETX06FP |
15 A, 600 V, SILICON, RECTIFIER DIODE, TO-220AC
Hyperfast Rectifier
600V 15A HyperFast Discrete Diode in a TO-220AC package
600V 15A HyperFast Discrete Diode in a TO-262 package
600V 15A HyperFast Discrete Diode in a TO-220 FullPack package
|
IRF[International Rectifier]
|
| 15ETL06FPPBF 15ETH06FPPBF F06FPPBF |
Diode Switching 600V 15A 2-Pin(2 Tab) TO-220 Full-Pak Tube
Diode Switching 600V 10A 2-Pin(2 Tab) TO-220AC
|
Vishay Semiconductors
|
